Spin-polarized quantum transport in Fe4N based current-perpendicular-to-plane spin valve

2019 ◽  
Vol 466 ◽  
pp. 78-83 ◽  
Author(s):  
Yu Feng ◽  
Zhou Cui ◽  
Ming-sheng Wei ◽  
Bo Wu
2005 ◽  
Vol 97 (10) ◽  
pp. 10C507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Kiyoshi Kuga

2004 ◽  
Vol 40 (1) ◽  
pp. 207-212 ◽  
Author(s):  
M. Saito ◽  
N. Hasegawa ◽  
Y. Ide ◽  
Y. Nishiyama ◽  
Y. Hayakawa ◽  
...  

Author(s):  
Taisei Ariki ◽  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.


SPIN ◽  
2020 ◽  
Vol 10 (02) ◽  
pp. 2050012
Author(s):  
H. Bhoomeeswaran ◽  
P. Sabareesan

The current-driven magnetization precession dynamics stimulated by Spin-Transfer Torque (STT) in a trilayer spin-valve device (typically Spin-Torque Nanooscillator (STNO)) is numerically investigated by solving the Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation. We have devised four STNO devices made of ferromagnetic alloys such as CoPt, CoFeB, Fe[Formula: see text]B[Formula: see text]Ni2 and EuO, which act as free and fixed layers. Here, copper acts as a nonmagnetic spacer for all the devices. In this work, we have introduced the current-induced Oersted field, which is generated when a spin-polarized current passes through the device. The generated Oersted field strength is varied by increasing the diameter of the STNO device. Frequency tunability is achieved in all the four devices, whereas the power of the individual device reduces. The frequency and power of the devices depend entirely on the saturation magnetization of the material, which inherently reflects in the current density and the coherence of the spin-polarized DC. In all devices, the frequency increases, whereas the power decreases by increasing the strength of the Oersted field. Among the four devices, the maximum frequency can be tuned up to 104[Formula: see text]GHz with 40[Formula: see text]nm device diameter, which is obtained for EuO material. This opens a promising source and paves a glittering future for the nanoscale spintronic devices.


2002 ◽  
Vol 38 (1) ◽  
pp. 84-88 ◽  
Author(s):  
A. Tanaka ◽  
Y. Shimizu ◽  
Y. Seyama ◽  
K. Nagasaka ◽  
R. Kondo ◽  
...  

2016 ◽  
Vol 18 (3) ◽  
pp. 1601-1606 ◽  
Author(s):  
Mingyan Chen ◽  
Zhizhou Yu ◽  
Yin Wang ◽  
Yiqun Xie ◽  
Jian Wang ◽  
...  

Nonequilibrium spin injection and spin-polarized quantum transport in monolayer black phosphorus are studied using the first principles method.


Science ◽  
2012 ◽  
Vol 337 (6091) ◽  
pp. 204-209 ◽  
Author(s):  
T. D. Nguyen ◽  
E. Ehrenfreund ◽  
Z. V. Vardeny

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