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Shengsheng Wei ◽  
Zhipeng Yin ◽  
Jiao Bai ◽  
Weiwei Xie ◽  
Fuwen Qin ◽  
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Keyword(s):  
Electronic Properties ◽  
Point Defects ◽  
Structural And Electronic Properties ◽  
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2012 ◽  
Vol 19 (2) ◽  
pp. 839-846 ◽  
Author(s):  
Ernesto Chigo Anota ◽  
Alejandro Escobedo-Morales ◽  
Martin Salazar Villanueva ◽  
Odilon Vázquez-Cuchillo ◽  
Efrain Rubio Rosas
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scholarly journals Structural and electronic properties of hydrogenated GaBi and InBi honeycomb monolayers with point defects

RSC Advances ◽  
2018 ◽  
Vol 8 (13) ◽  
pp. 7022-7028 ◽  
Author(s):  
Yunzhen Zhang ◽  
Han Ye ◽  
Zhongyuan Yu ◽  
Han Gao ◽  
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Vacancies, antisites and Stone–Wales defects in H2-Ga(In)Bi monolayer are investigated using first-principles calculations.

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2018 ◽  
Vol 103 ◽  
pp. 289-293 ◽  
Author(s):  
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Yunzhen Zhang ◽  
Han Ye ◽  
Zhongyuan Yu ◽  
Yumin Liu ◽  
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Structural and electronic properties of ZnMgO/ZnO quantum wells

2005 ◽  
Vol 38 (4-6) ◽  
pp. 455-463 ◽  
Author(s):  
C. Morhain ◽  
X. Tang ◽  
M. Teisseire-Doninelli ◽  
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Quantum Wells ◽  
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