A DFT study of the effect of stacking on the quantum capacitance of bilayer graphene materials

Carbon ◽  
2022 ◽  
Vol 188 ◽  
pp. 545
Guang-yu CUI ◽  
Zong-lin YI ◽  
Fang-yuan SU ◽  
Cheng-meng CHEN ◽  
Pei-de HAN
2021 ◽  
Vol 36 (6) ◽  
pp. 1062-1070
Guang-yu Cui ◽  
Zong-lin Yi ◽  
Fang-yuan Su ◽  
Cheng-meng Chen ◽  
Pei-de Han

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Hediyeh Karimi ◽  
Rubiyah Yusof ◽  
Mohammad Taghi Ahmadi ◽  
Mehdi Saeidmanesh ◽  
Meisam Rahmani ◽  

Quantum capacitance of electrolyte-gated bilayer graphene field-effect transistors is investigated in this paper. Bilayer graphene has received huge attention due to the fact that an energy gap could be opened by chemical doping or by applying external perpendicular electric field. So, this extraordinary property can be exploited to use bilayer graphene as a channel in electrolyte-gated field-effect transistors. The quantum capacitance of bi-layer graphene with an equivalent circuit is presented, and also based on the analytical model a numerical solution is reported. We begin by modeling the DOS, followed by carrier concentration as a functionVin degenerate and nondegenerate regimes. To further confirm this viewpoint, the presented analytical model is compared with experimental data, and acceptable agreement is reported.

2020 ◽  
Vol 536 ◽  
pp. 110828
Yong Shuai ◽  
Muhammad Rafique ◽  
M. Moazam Baloch ◽  
Mohsin Ali Tunio ◽  
Irfan Ahmed

2018 ◽  
Boddepalli Santhi Bhushan ◽  
Anurag Srivastava

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Hatef Sadeghi ◽  
Daniel T. H. Lai ◽  
Jean-Michel Redoute ◽  
Aladin Zayegh

Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacking bilayer graphene (BG) and trilayer graphene (TG) as the channel of FET devices. The analytical models of quantum capacitance (QC) of BG and TG are presented. Although QC is smaller than the classic capacitance in conventional devices, its contribution to the total metal oxide semiconductor capacitor in graphene-based FET devices becomes significant in the nanoscale. Our calculation shows that QC increases with gate voltage in both BG and TG and decreases with temperature with some fluctuations. However, in bilayer graphene the fluctuation is higher due to its tunable band structure with external electric fields. In similar temperature and size, QC in metal oxide BG is higher than metal oxide TG configuration. Moreover, in both BG and TG, total capacitance is more affected by classic capacitance as the distance between gate electrode and channel increases. However, QC is more dominant when the channel becomes thinner into the nanoscale, and therefore we mostly deal with quantum capacitance in top gate in contrast with bottom gate that the classic capacitance is dominant.

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