Influence of oxygen pressure on microstructure and dielectric properties of lead-free BaTi0.85Sn0.15O3 thin films prepared by pulsed laser deposition

2016 ◽  
Vol 42 (14) ◽  
pp. 15793-15797 ◽  
Author(s):  
Muying Wu ◽  
Shihui Yu ◽  
Lin He ◽  
Lei Yang ◽  
Weifeng Zhang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Lead Free

Pulsed laser deposition of lead-free (Na0.5Bi0.5)1−xBaxTiO3 ferroelectric thin films with enhanced dielectric properties

2013 ◽  
Vol 278 ◽  
pp. 162-165 ◽  
Author(s):  
A. Andrei ◽  
N.D. Scarisoreanu ◽  
R. Birjega ◽  
M. Dinescu ◽  
G. Stanciu ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Lead Free

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

Dielectric properties of SrZrO3 thin films prepared by pulsed laser deposition

2003 ◽  
Vol 77 (3-4) ◽  
pp. 481-484 ◽  
Author(s):  
X.B. Lu ◽  
G.H. Shi ◽  
J.F. Webb ◽  
Z.G. Liu
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Effect of oxygen pressure performance of PZO thin films deposited by pulsed laser deposition at low temperature

2017 ◽  
Vol 727 ◽  
pp. 1273-1279 ◽  
Author(s):  
Shihui Yu ◽  
Binhui Zhu ◽  
Haoran Zheng ◽  
Lingxia Li ◽  
Siliang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Effect Of Oxygen

Role of oxygen pressure in growth of CeAlOx thin films on Si by pulsed laser deposition

2003 ◽  
Vol 94 (1) ◽  
pp. 594-597 ◽  
Author(s):  
L. Yan ◽  
L. B. Kong ◽  
J. S. Pan ◽  
C. K. Ong
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition
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