DESIGN AND SIMULATION OF CHARGE TRANSPORT IN SINGLE-ELECTRON TRANSISTOR USING TCAD NUMERICAL SIMULATOR

Author(s):  
Tarun Singhal ◽  
Ankur Singhal ◽  
Sunil Chawla ◽  
Vinay Bhatia
1994 ◽  
Vol 203 (3-4) ◽  
pp. 327-339 ◽  
Author(s):  
J.M. Hergenrother ◽  
M.T. Tuominen ◽  
J.G. Lu ◽  
D.C. Ralph ◽  
M. Tinkham

2016 ◽  
Vol 120 (16) ◽  
pp. 164306 ◽  
Author(s):  
Masanori Kobo ◽  
Makoto Yamamoto ◽  
Hisao Ishii ◽  
Yutaka Noguchi

1997 ◽  
Vol 39 (3) ◽  
pp. 305-310 ◽  
Author(s):  
A. J Manninen ◽  
Yu. A Pashkin ◽  
A. N Korotkov ◽  
J. P Pekola

2020 ◽  
Vol 60 (3) ◽  
Author(s):  
Dmitri V. Khveshchenko

We study the behaviour of a single electron transistor (SET) represented by a dissipative tunnel junction between a pair of quantum dots described by two (possibly, different) Sachdev–Ye–Kitaev (SYK) models. A combined influence of the soft collective charge and energy modes on charge transport is discussed, alongside the competing effects of the Coulomb blockade and emergent Kondo resonances which might all conspire to result in a non-monotonic behaviour of the system’s conductance.


2002 ◽  
Vol 13 (2-4) ◽  
pp. 946-949 ◽  
Author(s):  
B.H Choi ◽  
Y.S Yu ◽  
D.H Kim ◽  
S.H Son ◽  
K.H Cho ◽  
...  

2001 ◽  
Vol 89 (1) ◽  
pp. 410-419 ◽  
Author(s):  
Nicole Y. Morgan ◽  
David Abusch-Magder ◽  
Marc A. Kastner ◽  
Yasuo Takahashi ◽  
Hiroyuki Tamura ◽  
...  

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