Electronic structure and transport properties of Co(Si1−xMx) (M=Al, P): First-principles study

2007 ◽  
Vol 39 (4) ◽  
pp. 752-758 ◽  
Author(s):  
Z.J. Pan ◽  
L.T. Zhang ◽  
J.S. Wu
2016 ◽  
Vol 18 (14) ◽  
pp. 9779-9787 ◽  
Author(s):  
Jie Sun ◽  
Na Lin ◽  
Hao Ren ◽  
Cheng Tang ◽  
Letao Yang ◽  
...  

First principles calculations are performed to systematically study the structure, mechanical, electrical, and transport properties of the new artificial layered semiconductors-black arsenic–phosphorus (b-AsP).


Author(s):  
Ho Ngoc Nam ◽  
Ryo Yamada ◽  
Haruki Okumura ◽  
Tien Quang Nguyen ◽  
Katsuhiro Suzuki ◽  
...  

Correction for ‘Intrinsic defect formation and the effect of transition metal doping on transport properties in a ductile thermoelectric material α-Ag2S: a first-principles study’ by Ho Ngoc Nam et al., Phys. Chem. Chem. Phys., 2021, DOI: 10.1039/d0cp06624a.


2012 ◽  
Vol 54 ◽  
pp. 287-292 ◽  
Author(s):  
Xiao-Jun Chen ◽  
Meng-Xue Zeng ◽  
Ren-Nian Wang ◽  
Zhou-Sheng Mo ◽  
Bi-Yu Tang ◽  
...  

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