scholarly journals Thick heavily boron doped CVD diamond films homoepitaxially grown on (111)-oriented substrates

2017 ◽  
Vol 79 ◽  
pp. 108-111 ◽  
Author(s):  
A. Boussadi ◽  
A. Tallaire ◽  
O. Brinza ◽  
M.A. Pinault-Thaury ◽  
J. Achard
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Boron Doped

scholarly journals Mechanical Properties of Boron-Doped CVD Diamond Films

2010 ◽  
Vol 61 (3) ◽  
pp. 274-278 ◽  
Author(s):  
Sadao TAKEUCHI ◽  
Takashi MURAISHI
Keyword(s):  
Mechanical Properties ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Boron Doped

OSL and TL dosimeter characterization of boron doped CVD diamond films

2005 ◽  
Vol 27 (7) ◽  
pp. 1231-1234 ◽  
Author(s):  
J.A.N. Gonçalves ◽  
G.M. Sandonato ◽  
R. Meléndrez ◽  
V. Chernov ◽  
M. Pedroza-Montero ◽  
...  
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Boron Doped

Piezoresistivity of boron doped CVD diamond films

1997 ◽  
Vol 46 (1-3) ◽  
pp. 112-114 ◽  
Author(s):  
Yu. Boiko ◽  
P. Gonon ◽  
S. Prawer ◽  
D.N. Jamieson
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Boron Doped

UV Schottky photodiode on boron-doped CVD diamond films

2006 ◽  
Vol 15 (11-12) ◽  
pp. 1972-1975 ◽  
Author(s):  
V.I. Polyakov ◽  
A.I. Rukovishnikov ◽  
L.A. Avdeeva ◽  
Z.E. Kun'kova ◽  
V.P. Varnin ◽  
...  
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Boron Doped ◽  
Schottky Photodiode

scholarly journals Boron Doping of Microcrystalline and Nanocrystalline Diamond Films: Where is the Boron Going?

2007 ◽  
Vol 1039 ◽  
Author(s):  
Paul William May ◽  
William J Ludlow ◽  
Matthew Hannaway ◽  
James A Smith ◽  
Keith N Rosser ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Grain Boundaries ◽  
Raman Spectra ◽  
Diamond Films ◽  
Boron Doping ◽  
Cvd Diamond ◽  
High Concentration ◽  
Metallic Conductivity ◽  
Boron Doped ◽  
Impurities And Defects

AbstractWe present data showing how the electrical conductivity and Raman spectra of boron doped ‘cauliflower’-type nanocrystalline (c-NCD) CVD diamond films vary as a function of B content. The conductivity is roughly linear as a function of B content between an onset threshold of ∼5×1020 cm−3 up to ∼6×1021 cm−3, with the higher concentrations giving near metallic conductivity values. The onset threshold may be due to compensating donors due to the large number of impurities and defects in these films. The position of the Lorentzian contribution to the 500 cm−1 Raman feature was used to estimate the B content and compared to the value measured using SIMS. We found that the Raman method overestimated the concentration of B by a factor of ∼5 for these c-NCD films. The shortfall may be explained if only a small fraction of the B found in the small-grained films is being incorporated into substitutional sites. We conclude that in diamond films with a high concentration of grain boundaries, the majority of the B (80% in some cases) must be present at or in the grain boundaries.

Comparison of the hole mobility in undoped and boron-doped polycrystalline CVD diamond films

1998 ◽  
Vol 3 (1) ◽  
pp. 25-30 ◽  
Author(s):  
Yuri Pleskov ◽  
Alik Tameev ◽  
Valentin Varnin ◽  
Irina Teremetskaya
Keyword(s):  
Diamond Films ◽  
Hole Mobility ◽  
Cvd Diamond ◽  
Boron Doped

Investigation on crystalline structure, boron distribution, and residual stresses in freestanding boron-doped CVD diamond films

2010 ◽  
Vol 312 (12-13) ◽  
pp. 1986-1991 ◽  
Author(s):  
Hongdong Li ◽  
Tong Zhang ◽  
Liuan Li ◽  
Xianyi Lü ◽  
Bo Li ◽  
...  
Keyword(s):  
Residual Stresses ◽  
Crystalline Structure ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Boron Doped ◽  
Boron Distribution

Growth of thick and heavily boron-doped (113)-oriented CVD diamond films

2016 ◽  
Vol 66 ◽  
pp. 61-66 ◽  
Author(s):  
A. Tallaire ◽  
A. Valentin ◽  
V. Mille ◽  
L. William ◽  
M.A. Pinault-Thaury ◽  
...  
Keyword(s):  
Diamond Films ◽  
Cvd Diamond ◽  
Boron Doped
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