A flow model of porous anodic film growth on aluminium

2006 ◽  
Vol 52 (2) ◽  
pp. 681-687 ◽  
Author(s):  
S.J. Garcia-Vergara ◽  
P. Skeldon ◽  
G.E. Thompson ◽  
H. Habazaki
Keyword(s):  
Flow Model ◽  
Film Growth ◽  
Anodic Film

EQCM Study of Anodic Film Growth on Valve Metals

2004 ◽  
Vol 151 (12) ◽  
pp. B652 ◽  
Author(s):  
C.-O. A. Olsson ◽  
M.-G. Vergé ◽  
D. Landolt
Keyword(s):  
Film Growth ◽  
Anodic Film ◽  
Valve Metals

Porous anodic film growth on beryllium in NaOH electrolyte

2016 ◽  
Vol 107 ◽  
pp. 21-30 ◽  
Author(s):  
Shixiong He ◽  
Hong Ye ◽  
Yanlong Ma ◽  
Liang Guo ◽  
Yingning Gou ◽  
...  
Keyword(s):  
Film Growth ◽  
Anodic Film

Study of Anodic Film Growth on GaAs and Bi2Te3byin situPhotoacoustic Technique

1981 ◽  
Vol 20 (8) ◽  
pp. 1423-1428 ◽  
Author(s):  
Chouho Yamagishi ◽  
Akihiro Moritani ◽  
Junkichi Nakai
Keyword(s):  
Film Growth ◽  
Anodic Film

Study of the Anodic Oxidation on Ti and Ta6V (Ti6A14V) by Ion-Implanted Xe Ions Markers and O18 Tracing Techniques

1989 ◽  
Vol 157 ◽  
Author(s):  
Heming Chen ◽  
Mingjiang Dai ◽  
Xinde Bai ◽  
Wangpei Li
Keyword(s):  
Anodic Oxidation ◽  
Film Growth ◽  
Anodic Film ◽  
Ammonium Citrate ◽  
Double Layers ◽  
Transport Numbers ◽  
Metal Interface ◽  
Oxide Interface ◽  
Oxygen Anions ◽  
Tracing Techniques

ABSTRACTThe techniques of single and double layers of implanted Xe ions marker as well as the O18 tracing method are used to study the mechanism of the anodic oxidation of Ti and TA6V (Ti6A14V). It is observed that in 5 wt% ammonium citrate, the mechanism of the anodic oxidation of Ti is very different from that of TA6V. For Ti, new oxide is formed mainly by the migration of Ti cations to the solution/oxide interface and the regions at which new oxide is formed are at the solution/oxide interface and in the pre-oxide near the interface. While for TA6V, anodic film growth is due to the migration of oxygen anions to the oxide/metal interface and the growth regions of new oxide are at the oxide/metal interface and in the pre-oxide near the interface. Transport numbers for Ti oxidized in 1 wt%. KOH are calculated and found to be affected by oxidation temperature, i.e. at 3'C, the average transport number is 0.32, while at 30&00B0;C,it is 0.28. Current efficiencies are above 99.8%. AES spectra show that the distribution profiles of the elements V and Al in anodic film on TA6V are uniform.

Anodic film growth on Al layers and Ta–Al metal bilayers in citric acid electrolytes

2005 ◽  
Vol 50 (25-26) ◽  
pp. 5065-5075 ◽  
Author(s):  
A. Mozalev ◽  
I. Mozaleva ◽  
M. Sakairi ◽  
H. Takahashi
Keyword(s):  
Citric Acid ◽  
Film Growth ◽  
Anodic Film ◽  
Metal Bilayers

Anodic film growth on Al–Nd alloys

2000 ◽  
Vol 42 (10) ◽  
pp. 1823-1830 ◽  
Author(s):  
A.E. Herrera-Erazo ◽  
H. Habazaki ◽  
K. Shimizu ◽  
P. Skeldon ◽  
G.E. Thompson
Keyword(s):  
Film Growth ◽  
Anodic Film

Direct observation of anodic film growth on superimposed aluminium and tantalum metallic layers

1990 ◽  
Vol 61 (5) ◽  
pp. 927-938 ◽  
Author(s):  
P. Skeldon ◽  
K. Shimizu ◽  
G. E. Thompson ◽  
G. C. Wood
Keyword(s):  
Direct Observation ◽  
Film Growth ◽  
Anodic Film

Ellipsometric investigations of anodic film growth on iron in neutral solution. Prepassive film

1971 ◽  
Vol 75 (18) ◽  
pp. 2823-2829 ◽  
Author(s):  
J. O'M. Bockris ◽  
H. Wroblowa ◽  
V. Brusic
Keyword(s):  
Film Growth ◽  
Anodic Film ◽  
Neutral Solution
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