Structural Influence of Nitrogen-containing Groups on Triphenylmethane-based Levelers in Super-conformal Copper Electroplating

Abstract In the manufacture of Printed Wiring Boards (PWB), unwelcome structures, such as nodules and whiskers can be formed during copper electroplating with copper sulfate. Copper (Cu) whiskers with lengths of up to a few hundred micrometers can lead to electrical shorts between layers or patterns. In this paper, we document factors that can affect the growth of Cu whiskers; decomposition of additives in the Cu electroplating solution, surface stress, acidic cleaner, and the ingredients of a dry film. Contaminants from outside of the electroplating bath and the ingredients of the dry film were shown as key components in the formation of Cu whiskers.

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Structural Influence of Dynamics of Bottom Loads

10.21236/ada624457 ◽

2014 ◽

Author(s):

Joachim Grenestedt

Keyword(s):

Structural Influence

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Rapid metallization by copper electroplating on insulating substrate using silver nanowires conductive composite as seed layer

Composites Communications ◽

10.1016/j.coco.2021.100819 ◽

2021 ◽

Vol 27 ◽

pp. 100819

Author(s):

Zhiqiang Lai ◽

Tao Zhao ◽

Pengli Zhu ◽

Jing Xiang ◽

Dan Liu ◽

...

Keyword(s):

Seed Layer ◽

Silver Nanowires ◽

Conductive Composite ◽

Copper Electroplating

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Infrared Absorption Films Developed by Copper Electroplating with Chemical Etching and Subsequent Blackening

Electrochemistry ◽

10.5796/electrochemistry.82.752 ◽

2014 ◽

Vol 82 (9) ◽

pp. 752-754

Author(s):

Tomiyuki ARAKAWA ◽

Nobuaki WATANABE ◽

Junki OSHIKIRI ◽

Ichiro KOIWA

Keyword(s):

Infrared Absorption ◽

Chemical Etching ◽

Copper Electroplating

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Copper Electroplating on Zero-Thickness ALD Platinum for Nanoscale Computer Chip Interconnects

MRS Proceedings ◽

10.1557/proc-0914-f05-08 ◽

2006 ◽

Vol 914 ◽

Cited By ~ 1

Author(s):

Alain Kaloyeros ◽

Yu Zhu ◽

Kathleen Dunn ◽

Richard Mayti ◽

Christopher Miller ◽

...

Keyword(s):

Sessile Drop ◽

Reverse Current ◽

Atomic Layer ◽

Organic Additive ◽

Constant Current ◽

Nucleation Density ◽

Cross Sectional ◽

Cu Films ◽

Copper Electroplating ◽

Seed Layers

AbstractUltra-thin platinum (Pt) films grown by atomic layer deposition (ALD) have been investigated as an alternative to conventional physical vapor deposited (PVD) Cu as seed layer for copper (Cu) electroplating. The wetting angles between the electrolyte and both Pt and Cu seed layers were analyzed using sessile-drop contact-angle analysis prior to plating. Both constant current and pulse reverse current (PRC) were applied to electroplate Cu on both types of blanket seed layers. Scanning electron microscope (SEM) revealed that Cu nucleation density on ALD Pt is lower than on its PVD Cu counterpart, after 30 seconds plating using PRC. Nevertheless, Cu nuclei were observed after only 1.0 minute plating on ALD Pt surfaces, and continuous Cu films were achieved at longer plating times. To fill trench structures coated with ALD Pt/TaN, PRC was applied using the same organic-additive-free electrolyte. Initial results suggest that these seed layers were adequate for ECD fill of trenches with 200 nm feature size and aspect ratio 7:1. The composition and microstructure of the Cu films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD), and cross-sectional transmission electron microscopy (TEM). Thermal stability of the Cu/Pt system was examined by annealing in forming gas at 450°C for 1 hour and subsequent analysis by XRD and TEM.

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