Failure analysis of gearbox in CRH high-speed train

2019 ◽  
Vol 105 ◽  
pp. 110-126 ◽  
Author(s):  
Yongxu Hu ◽  
Jianhui Lin ◽  
Andy Chit Tan
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
High Speed Train

Fatigue failure analysis of high speed train gearbox housings

2017 ◽  
Vol 73 ◽  
pp. 57-71 ◽  
Author(s):  
Weigang Hu ◽  
Zhiming Liu ◽  
Dekun Liu ◽  
Xue Hai
Keyword(s):  
Failure Analysis ◽  
Fatigue Failure ◽  
High Speed ◽  
High Speed Train

Failure Analysis of a Welded Aluminum Alloy Component in High-Speed Train

2011 ◽  
Vol 337 ◽  
pp. 670-673
Author(s):  
Yong Hui Zhu ◽  
Wei Zhou ◽  
Yuan Nie ◽  
Zhong Yin Zhu ◽  
Hui Chen ◽  
...  
Keyword(s):  
Aluminum Alloy ◽  
Stress Concentration ◽  
Failure Analysis ◽  
High Speed ◽  
Propagation Speed ◽  
Element Distribution ◽  
High Speed Train ◽  
Alloy Component ◽  
Stress Concentration Region ◽  
Weld Toe

In this paper, a failure analysis is made to a welded aluminum alloy component of the equipment by module below the high-speed train. Making force analysis to the welded components by finite element, microscopic morphology observation and element distribution measurement of the fracture surface are done by the scanning electron microscopy and spectroscopy .It is determined that the main reason of fracture of welded components was that stress concentration exist in the working conditions, and the weld toe is the most severe stress concentration region. The stress concentration causes the fatigue microcrack, and under the action of repeated external force crack propagates and then crack. Lacking of penetration sites is under tensile residual stress, the crack propagation speed, and soon to instability and then broken.

Nanoprobing Applications with Capacitance-Voltage and Pulsed Current-Voltage Measurements for Device Failure Analysis

2015 ◽  
Author(s):  
LiLung Lai ◽  
Nan Li ◽  
Qi Zhang ◽  
Tim Bao ◽  
Robert Newton
Keyword(s):  
Failure Analysis ◽  
High Speed ◽  
Pulsed Current ◽  
Electrical Measurements ◽  
Device Failure ◽  
Mos Devices ◽  
Atomic Force ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Rising Time

Abstract Owing to the advancing progress of electrical measurements using SEM (Scanning Electron Microscope) or AFM (Atomic Force Microscope) based nanoprober systems on nanoscale devices in the modern semiconductor laboratory, we already have the capability to apply DC sweep for quasi-static I-V (Current-Voltage), high speed pulsing waveform for the dynamic I-V, and AC imposed for C-V (Capacitance-Voltage) analysis to the MOS devices. The available frequency is up to 100MHz at the current techniques. The specification of pulsed falling/rising time is around 10-1ns and the measurable capacitance can be available down to 50aF, for the nano-dimension down to 14nm. The mechanisms of dynamic applications are somewhat deeper than quasi-static current-voltage analysis. Regarding the operation, it is complicated for pulsing function but much easy for C-V. The effective FA (Failure Analysis) applications include the detection of resistive gate and analysis for abnormal channel doping issue.

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