Predicting deformation-induced polymer–steel interface roughening and failure

2016 ◽  
Vol 55 ◽  
pp. 1-11 ◽  
Author(s):  
J. van Beeck ◽  
F. Maresca ◽  
T.W.J. de Geus ◽  
P.J.G. Schreurs ◽  
M.G.D. Geers
Keyword(s):  
1991 ◽  
Vol 1 (10) ◽  
pp. 1139-1146 ◽  
Author(s):  
Mogens H. Jensen ◽  
Itamar Procaccia
Keyword(s):  

2021 ◽  
Vol 182 (3) ◽  
Author(s):  
Gernot Münster ◽  
Manuel Cañizares Guerrero

AbstractRoughening of interfaces implies the divergence of the interface width w with the system size L. For two-dimensional systems the divergence of $$w^2$$ w 2 is linear in L. In the framework of a detailed capillary wave approximation and of statistical field theory we derive an expression for the asymptotic behaviour of $$w^2$$ w 2 , which differs from results in the literature. It is confirmed by Monte Carlo simulations.


2000 ◽  
Vol 80 (7) ◽  
pp. 503-509 ◽  
Author(s):  
Alexander S. Balankin ◽  
Armandobravo Ortega ◽  
Daniel Moralesmatamoros
Keyword(s):  

1991 ◽  
Vol 66 (5) ◽  
pp. 530-533 ◽  
Author(s):  
Martin Hasenbusch ◽  
Steffen Meyer

1993 ◽  
Vol 21 (4) ◽  
pp. 401-406 ◽  
Author(s):  
E Hernández-García ◽  
T Ala-Nissila ◽  
M Grant

1994 ◽  
Vol 65 (20) ◽  
pp. 2609-2611 ◽  
Author(s):  
Shigehiko Hasegawa ◽  
Robert G. Ryland ◽  
Ellen D. Williams
Keyword(s):  

1992 ◽  
Vol 45 (12) ◽  
pp. R8313-R8316 ◽  
Author(s):  
S. V. Buldyrev ◽  
A.-L. Barabási ◽  
F. Caserta ◽  
S. Havlin ◽  
H. E. Stanley ◽  
...  

1986 ◽  
Vol 1 (4) ◽  
pp. 537-542 ◽  
Author(s):  
Jeffrey R. Lince ◽  
Tsai C. Thomas ◽  
Williams R. Stanley

Thin AuGa2 films were grown by codeposition from separate Au and Ga evaporation sources on clean GaAs(001) substrates in ultrahigh vacuum, and were studied by Auger electron spectroscopy, electron energy-loss spectroscopy, low-energy electron diffraction, scanning electron microscopy, and x-ray diffractometry. The morphology and crystallinity of the AuGa2 were highly dependent upon the film deposition and annealing history. Films grown on room-temperature substrates were continuous, specular, and polycrystalline, but the dominant orientation was with the (001) planes of the crystallites parallel to the substrate surface. Annealing to temperatures between 300°and 480°C caused the film to break up and coalesce into rectangular crystallites, which were all oriented with (001) parallel to the surface. An anneal to 500°C, which is above the AuGa2 melting point, resulted in the formation of irregular polycrystalline islands of AuGa2 on the GaAs(001) substrate. No interface roughening or chemical reactions between the film and substrate or interface were observed for even the highest-temperature anneals.


1987 ◽  
Vol 35 (13) ◽  
pp. 6792-6795 ◽  
Author(s):  
Debashish Chowdhury ◽  
Martin Grant ◽  
J. D. Gunton

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