Coupled numerical simulation of arc plasma channel evolution and discharge crater formation in arc discharge machining

2019 ◽  
Vol 135 ◽  
pp. 674-684 ◽  
Author(s):  
Lin Gu ◽  
Yingmou Zhu ◽  
Guojian He ◽  
Ahmad Farhadi ◽  
Wansheng Zhao
Keyword(s):  
Numerical Simulation ◽  
Plasma Channel ◽  
Arc Discharge ◽  
Arc Plasma ◽  
Crater Formation ◽  
Channel Evolution

scholarly journals Discharge crater formation simulation coupled by thermo-fluid analysis of arc plasma in EDM

Procedia CIRP ◽  
2020 ◽  
Vol 95 ◽  
pp. 232-237
Author(s):  
Xiaodong Yang ◽  
Songyuan Lu ◽  
Xiaohui Li ◽  
Qi Li
Keyword(s):  
Arc Plasma ◽  
Crater Formation ◽  
Fluid Analysis

Numerical Simulation of Unsteady Behavior of Rotary Arc Plasma Under Magnetic Field

2010 ◽  
Author(s):  
Takayasu Fujino ◽  
Satoshi Hirayama ◽  
Motoo Ishikawa ◽  
Tadashi Mori ◽  
Katsuharu Iwamoto ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Arc Plasma ◽  
Unsteady Behavior

scholarly journals Observation analysis of arc plasma channel developing and expansion behavior in single arc discharging

2018 ◽  
Vol 26 ◽  
pp. 454-461 ◽  
Author(s):  
Yingmou Zhu ◽  
Ahmad Farhadi ◽  
Lin Gu ◽  
Xiaoming Kang ◽  
Wansheng Zhao
Keyword(s):  
Plasma Channel ◽  
Arc Plasma ◽  
Expansion Behavior ◽  
Single Arc

scholarly journals Numerical simulation of the plasma parameters of a low-pressure arc discharge in helium

2018 ◽  
Vol 1128 ◽  
pp. 012119
Author(s):  
A V Fedoseev ◽  
N A Demin ◽  
S Z Sakhapov ◽  
A V Zaikovskii ◽  
D V Smovzh
Keyword(s):  
Numerical Simulation ◽  
Arc Discharge ◽  
Low Pressure ◽  
Plasma Parameters

Structural studies of diamond thin films grown from dc arc plasma

1997 ◽  
Vol 12 (10) ◽  
pp. 2533-2542 ◽  
Author(s):  
L. C. Nistor ◽  
J. Van Landuyt ◽  
V. G. Ralchenko ◽  
A. A. Smolin ◽  
K. G. Korotushenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Arc Discharge ◽  
Stacking Faults ◽  
Argon Laser ◽  
Arc Plasma ◽  
Structural Studies ◽  
Transmission Electron ◽  
Diamond Thin Films ◽  
Dc Arc

Diamond thin films grown from a dc-arc discharge in CH4/H2 mixtures on Si wafers were examined by transmission electron microscopy and Raman spectroscopy. This deposition method provides good diamond crystallinity at high CH4 concentrations (3%–9%). Seeding the substrate with 5 nm diamond particles at a density of 2 × 1012 cm−1 followed by argon laser irradiation to reduce their agglomeration gives, just after starting deposition, a density of growth centers of 1010cm−2. At 3% CH4 concentration the film grows with almost perfect crystallites. Richer CH4 mixtures (5% and 9%) produce crystallites with twins and stacking faults. An amorphous 20–70 nm SiC interlayer is present at these CH4 concentrations, which was not observed at 3% CH4. Amorphous sp3- and sp2-bonded carbon was detected by Raman spectroscopy at all CH4 concentrations and correlated with TEM data.

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