Effects of Ge doping on the thermoelectric properties of TiCoSb-based p-type half-Heusler compounds

2009 ◽  
Vol 467 (1-2) ◽  
pp. 590-594 ◽  
Author(s):  
Ting Wu ◽  
Wan Jiang ◽  
Xiaoya Li ◽  
Shengqiang Bai ◽  
Shengcong Liufu ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Heusler Compounds ◽  
P Type ◽  
Ge Doping

scholarly journals Thermoelectric Properties of P-Type Heusler Compounds (Fe2−xCox)(V1−yTiy)Al

2008 ◽  
Vol 49 (8) ◽  
pp. 1858-1862 ◽  
Author(s):  
Hiroyuki Nakayama ◽  
Naoki Ide ◽  
Yoichi Nishino
Keyword(s):  
Thermoelectric Properties ◽  
Heusler Compounds ◽  
P Type

Distinct role of Sn and Ge doping on thermoelectric properties in p-type (Bi, Sb)2Te3-alloys

2020 ◽  
Vol 292 ◽  
pp. 121722
Author(s):  
Zhengkai Zhang ◽  
Yu Cao ◽  
Qirui Tao ◽  
Yonggao Yan ◽  
Xianli Su ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
P Type ◽  
Ge Doping ◽  
Distinct Role

Substitution effect on the thermoelectric properties of p-type half-Heusler compounds: ErNi1−xPdxSb

2008 ◽  
Vol 104 (1) ◽  
pp. 013714 ◽  
Author(s):  
Kenta Kawano ◽  
Ken Kurosaki ◽  
Hiroaki Muta ◽  
Shinsuke Yamanaka
Keyword(s):  
Thermoelectric Properties ◽  
Substitution Effect ◽  
Heusler Compounds ◽  
P Type

Thermoelectric Properties of Half-Heusler Compounds N-type MNiSn and P-type MPtSn (M = Hf, Zr)

2006 ◽  
Vol 980 ◽  
Author(s):  
Yoshisato Kimura ◽  
Tomoya Kuji ◽  
Akihisa Zama ◽  
Taiki Lee ◽  
Yoshinao Mishima
Keyword(s):  
Thermoelectric Properties ◽  
Thermal Conduction ◽  
Figure Of Merit ◽  
Zone Melting ◽  
Heusler Compounds ◽  
Floating Zone ◽  
Lattice Contribution ◽  
P Type ◽  
Increase Carrier Concentration ◽  
Lower Electrical Resistivity

AbstractTo design and to develop Half-Heusler based high-temperature thermoelectric materials, thermoelectric properties of n-type MNiSn and p-type MPtSn (M = Hf, Zr) were investigated based on two respective strategies. For the n-type (Hf, Zr)NiSn, a combined process of optical floating zone melting and hot-pressing was applied aiming to reduce thermal conduction through the lattice contribution. For the p-type HfPtSn, power factor and hence figure of merit ZT were dramatically improved by the p-type doping of Ir and Co targeting for Pt-site, which effectively lower electrical resistivity. The additions of Ir and Co are expected not only to increase carrier concentration but also to suppress the lattice thermal conduction by substituting for Pt.

Validity of Rigid-Band Approximation in the Study of Thermoelectric Properties of p-Type FeNbSb-Based Half-Heusler Compounds

2016 ◽  
Vol 46 (5) ◽  
pp. 3030-3035 ◽  
Author(s):  
Teng Fang ◽  
Shuqi Zheng ◽  
Tian Zhou ◽  
Hong Chen ◽  
Peng Zhang
Keyword(s):  
Thermoelectric Properties ◽  
Heusler Compounds ◽  
P Type

Realizing Excellent n‐ and p‐Type Niobium‐Based Half‐Heusler Compounds Based on Thermoelectric Properties and High‐Temperature Stability

2020 ◽  
Vol 6 (6) ◽  
pp. 2000083 ◽  
Author(s):  
Wanthana Silpawilawan ◽  
Sora‐at Tanuslip ◽  
Raju Chetty ◽  
Michihiro Ohta ◽  
Yuji Ohishi ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
Temperature Stability ◽  
Heusler Compounds ◽  
High Temperature Stability ◽  
P Type

Thermoelectric properties of p-type Fe-doped TiCoSb half-Heusler compounds

2007 ◽  
Vol 102 (10) ◽  
pp. 103705 ◽  
Author(s):  
Ting Wu ◽  
Wan Jiang ◽  
Xiaoya Li ◽  
Yanfei Zhou ◽  
Lidong Chen
Keyword(s):  
Thermoelectric Properties ◽  
Heusler Compounds ◽  
P Type
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