Crystal and electronic structure of high temperature superconducting compound Y 1−x Ca x Ba 2 Cu 3 O y in the temperature interval 80–300 K

2016 ◽  
Vol 658 ◽  
pp. 891-897 ◽  
Author(s):  
Svetlana G. Titova ◽  
Alexey V. Lukoyanov ◽  
Stepan V. Pryanichnikov ◽  
Lubov A. Cherepanova ◽  
Alexander N. Titov
Keyword(s):  
Electronic Structure ◽  
High Temperature ◽  
Temperature Interval ◽  
High Temperature Superconducting ◽  
Superconducting Compound ◽  
Crystal And Electronic Structure

Sharp phonon modes in the high-temperature superconducting compound Y0.9Ba0.6CuO3-y

1987 ◽  
Vol 20 (32) ◽  
pp. L917-L922 ◽  
Author(s):  
Zhao Min-Guang ◽  
Zeng Xiao-Lan ◽  
Qian You-Ping ◽  
Yi Jun ◽  
Zhao Xiao-Ning
Keyword(s):  
High Temperature ◽  
Phonon Modes ◽  
High Temperature Superconducting ◽  
Superconducting Compound

Electronic Structure in High Temperature Superconducting Oxides

1992 ◽  
Vol 105-110 ◽  
pp. 265-272 ◽  
Author(s):  
Richard H. Howell ◽  
P.A. Sterne ◽  
F. Solal ◽  
Michael J. Fluss ◽  
J. Tobin ◽  
...  
Keyword(s):  
Electronic Structure ◽  
High Temperature ◽  
High Temperature Superconducting ◽  
Superconducting Oxides

Anomalous structural behaviour of the high-temperature superconducting compound La1.8Sr0.2CuO4-y

1988 ◽  
Vol 65 (10) ◽  
pp. 1167-1170 ◽  
Author(s):  
R.L. Bolotovskii ◽  
A.P. Bulkin ◽  
G.A. Krutov ◽  
V.A. Kudrjaschev ◽  
S.V. Maleyev ◽  
...  
Keyword(s):  
High Temperature ◽  
Structural Behaviour ◽  
High Temperature Superconducting ◽  
Superconducting Compound

Electronic structure, charge transfer excitations, and high‐temperature superconducting oxides (invited)

1988 ◽  
Vol 63 (8) ◽  
pp. 4220-4225 ◽  
Author(s):  
A. J. Freeman ◽  
Jaejun Yu ◽  
S. Massidda ◽  
C. L. Fu ◽  
J.‐H. Xu
Keyword(s):  
Electronic Structure ◽  
Charge Transfer ◽  
High Temperature ◽  
High Temperature Superconducting ◽  
Superconducting Oxides

scholarly journals Mechanism of Defect Formation in Zr1 – xVxNiSn Thermoelectric Material

2021 ◽  
Vol 66 (4) ◽  
pp. 333
Author(s):  
V.V. Romaka ◽  
Yu.V. Stadnyk ◽  
P.F. Rogl ◽  
L.P. Romaka ◽  
V.Ya. Krayovskyy ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electric Conductivity ◽  
Temperature Interval ◽  
Thermoelectric Material ◽  
Defect Formation ◽  
Energy State ◽  
Structural Defects ◽  
Simultaneous Generation ◽  
Mechanism Of Defect Formation ◽  
Crystal And Electronic Structure

Crystal and electronic structure, transport and energy state characteristics of the Zr1−xVx NiSn (0.01 ≤ x ≤ 0.1) thermoelectric material are investigated in the 80–400 K temperature interval. A mechanism of simultaneous generation of structural defects of the acceptor and donor nature, which determines the electric conductivity of the material, is established. It is shown that energetically expedient is a simultaneous occupation of the 4c position of Ni (3d84s2) atoms by V (3d34s2) atoms, which generates structural defects of the acceptor nature and the impurity acceptor band Ꜫ1A, as well as the 4a position of Zr (4d25s2) atoms, generating structural defects of the donor nature and the impurity donor band Ꜫ2D.

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