Controllable morphologies and electrochemical properties of graphitizing MCMB-based hybrids with nanostructure via a simple chemical vapor deposition method

2017 ◽  
Vol 724 ◽  
pp. 443-449 ◽  
Author(s):  
Youliang Cheng ◽  
Qingling Zhang ◽  
Changqing Fang ◽  
Jing Chen ◽  
Shaohua Guo ◽  
...  
2021 ◽  
Author(s):  
Haipeng Wang ◽  
Cheng Liu ◽  
HuiLi Wang ◽  
Xinpeng Han ◽  
Shaojie Zhang ◽  
...  

One of the phosphorus allotropes called greenish phosphorus was successfully synthesized by simple chemical vapor deposition method. We revealed that the critical factors in the formation mechanism of greenish phosphorus...


2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.


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