Investigation of spectroscopic and photoluminescence properties of Erbium doped phosphate (P2O5-K2O3-Al2O3) glasses

2022 ◽  
Vol 893 ◽  
pp. 162215
Author(s):  
F. Zaman ◽  
G. Rooh ◽  
N. Chanthima ◽  
S.U. Khan ◽  
H.J. Kim ◽  
...  
Keyword(s):  
Photoluminescence Properties ◽  
Erbium Doped

Structural, optical, and photoluminescence properties of erbium doped TiO2 films

Vacuum ◽  
2019 ◽  
Vol 169 ◽  
pp. 108873 ◽  
Author(s):  
J.A. Borrego Pérez ◽  
Maykel Courel ◽  
Rocío Castañeda Valderrama ◽  
I. Hernández ◽  
Mou Pal ◽  
...  
Keyword(s):  
Tio2 Films ◽  
Photoluminescence Properties ◽  
Doped Tio2 ◽  
Erbium Doped

Photoluminescence properties of erbium doped InGaN epilayers

2009 ◽  
Vol 95 (4) ◽  
pp. 041113 ◽  
Author(s):  
A. Sedhain ◽  
C. Ugolini ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
J. M. Zavada
Keyword(s):  
Photoluminescence Properties ◽  
Erbium Doped

Topological Engineering of Photoluminescence Properties of Bismuth- or Erbium-Doped Phosphosilicate Glass of Arbitrary P2 O5 to SiO2 Ratio

2018 ◽  
Vol 6 (13) ◽  
pp. 1800024 ◽  
Author(s):  
Yushi Chu ◽  
Qingliu Hu ◽  
Yindong Zhang ◽  
Zhigang Gao ◽  
Zaijin Fang ◽  
...  
Keyword(s):  
Photoluminescence Properties ◽  
Erbium Doped ◽  
Phosphosilicate Glass

Photoluminescence properties of erbium-doped europium thiosilicate

2011 ◽  
Vol 44 (9) ◽  
pp. 095404 ◽  
Author(s):  
Mitsuharu Sugiyama ◽  
Yasushi Nanai ◽  
Yuu Okada ◽  
Tsuyoshi Okuno
Keyword(s):  
Photoluminescence Properties ◽  
Erbium Doped

scholarly journals Er3+ Photoluminescence Properties of Erbium-doped Si/SiO2 Superlattices with sub-nm Thin Si Layers

2000 ◽  
Vol 638 ◽  
Author(s):  
Yong Ho Ha ◽  
Sehun Kim ◽  
Dae Won Moon ◽  
Ji-Hong Jhe ◽  
Jung H. Shin
Keyword(s):  
Temperature Dependence ◽  
Layer Thickness ◽  
Luminescence Intensity ◽  
Luminescence Properties ◽  
Photoluminescence Properties ◽  
Time Resolved ◽  
Excitation Rate ◽  
Erbium Doped ◽  
Order Of Magnitude ◽  
Er Doped

AbstractThe effect of varying the Si layer thickness on the Er3+ photoluminescence properties of Er-doped Si/SiO2 superlattice is investigated. We find that as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si, the Er3+ luminescence intensity increases by over an order of magnitude. Temperature dependence of the Er3+ luminescence intensity and time-resolved measurement of Er3+ luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO2 interface in determining the Er3+ luminescence properties.

Photoluminescence properties of erbium-doped single-crystal and porous silicon films

1999 ◽  
Vol 25 (5) ◽  
pp. 393-394 ◽  
Author(s):  
L. K. Orlov ◽  
S. V. Ivin ◽  
D. V. Shengurov ◽  
É. A. Shteĭnman
Keyword(s):  
Porous Silicon ◽  
Single Crystal ◽  
Silicon Films ◽  
Photoluminescence Properties ◽  
Erbium Doped

scholarly journals Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers

2001 ◽  
Vol 79 (3) ◽  
pp. 287-289 ◽  
Author(s):  
Yong Ho Ha ◽  
Sehun Kim ◽  
Dae Won Moon ◽  
Ji-Hong Jhe ◽  
Jung H. Shin
Keyword(s):  
Photoluminescence Properties ◽  
Erbium Doped

Fabrication and photoluminescence properties of erbium doped size-controlled silicon nanocrystals

2003 ◽  
Vol 105 (1-3) ◽  
pp. 214-220 ◽  
Author(s):  
J Heitmann ◽  
M Schmidt ◽  
M Zacharias ◽  
V.Yu Timoshenko ◽  
M.G Lisachenko ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Photoluminescence Properties ◽  
Erbium Doped ◽  
Size Controlled
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