SiC single crystal growth by a modified physical vapor transport technique

2005 ◽  
Vol 275 (1-2) ◽  
pp. e555-e560 ◽  
Author(s):  
Peter Wellmann ◽  
Patrick Desperrier ◽  
Ralf Müller ◽  
Thomas Straubinger ◽  
Albrecht Winnacker ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique

Influence of oxygen atmosphere on the crystal growth of copper(II) oxide

1990 ◽  
Vol 5 (1) ◽  
pp. 53-56 ◽  
Author(s):  
Edward C. Milliken ◽  
James F. Cordaro
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Growth Process ◽  
Chemical Vapor ◽  
Single Crystal Growth ◽  
Oxygen Atmosphere ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Partial Pressures ◽  
Transport Technique

Single crystal growth of CuO, synthetic tenorite, was accomplished in oxygen atmosphere by the chemical vapor transport technique. We present the first systematic study of the growth of CuO in various partial pressures of oxygen. Crystals were grown using trace, 0.1, and 0.5 atm partial pressures of oxygen. The growth temperatures used were 820 and 865 °C. Typical dimensions of the crystals obtained were 1 × 2 × 0.25 mm. We have shown that the stoichiometry of single crystal CuO can be controlled during the growth process. The crystals exhibited cation deficient stoichiometry, Cu1−xO, with x increasing from less than 0.005 with no added oxygen, up to 0.05 with 0.5 atm O2 when grown at 865 °C.

Single crystal growth of CdSiAs2 by chemical vapor transport; its structure and electrical properties

1984 ◽  
Vol 67 (2) ◽  
pp. 185-194 ◽  
Author(s):  
M. Avirović ◽  
M. Lux-Steiner ◽  
U. Elrod ◽  
J. Hönigschmid ◽  
E. Bucher
Keyword(s):  
Crystal Growth ◽  
Electrical Properties ◽  
Single Crystal ◽  
Chemical Vapor ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Chemical Vapor Transport

Sublimation Growth and Defect Characterization of AlN Single Crystals

2007 ◽  
Vol 1040 ◽  
Author(s):  
Shaoping Wang ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Zaiyuan Ren ◽  
Jung Han ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Defect Characterization ◽  
Growth Technique ◽  
X Ray ◽  
Sublimation Growth ◽  
Growth Experiments

AbstractIn this paper, we report results from AlN single crystal growth experiments using a sublimation physical vapor transport growth technique. AlN single crystal boules up to 7mm in diameter were demonstrated. Characterization of polished AlN single crystal samples was carried out using various techniques, including synchrotron X-ray topography.

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