Single-Crystal Growth of Bi-Sb-Te Thermoelectric Materials by Halide Chemical Vapor Transport Technique

Single crystal growth of CuO, synthetic tenorite, was accomplished in oxygen atmosphere by the chemical vapor transport technique. We present the first systematic study of the growth of CuO in various partial pressures of oxygen. Crystals were grown using trace, 0.1, and 0.5 atm partial pressures of oxygen. The growth temperatures used were 820 and 865 °C. Typical dimensions of the crystals obtained were 1 × 2 × 0.25 mm. We have shown that the stoichiometry of single crystal CuO can be controlled during the growth process. The crystals exhibited cation deficient stoichiometry, Cu1−xO, with x increasing from less than 0.005 with no added oxygen, up to 0.05 with 0.5 atm O2 when grown at 865 °C.

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Single crystal growth of CdSiAs2 by chemical vapor transport; its structure and electrical properties

Journal of Crystal Growth ◽

10.1016/0022-0248(84)90177-5 ◽

1984 ◽

Vol 67 (2) ◽

pp. 185-194 ◽

Cited By ~ 5

Author(s):

M. Avirović ◽

M. Lux-Steiner ◽

U. Elrod ◽

J. Hönigschmid ◽

E. Bucher

Keyword(s):

Crystal Growth ◽

Electrical Properties ◽

Single Crystal ◽

Chemical Vapor ◽

Single Crystal Growth ◽

Vapor Transport ◽

Chemical Vapor Transport

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Single crystal growth of the new pressure-induced-superconductor CrAs via chemical vapor transport

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2016.03.236 ◽

2016 ◽

Vol 677 ◽

pp. 57-60 ◽

Cited By ~ 6

Author(s):

Xiangde Zhu ◽

Langsheng Ling ◽

Yuyan Han ◽

Junmin Xu ◽

Yongjian Wang ◽

...

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Chemical Vapor ◽

Single Crystal Growth ◽

Vapor Transport ◽

Chemical Vapor Transport

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ChemInform Abstract: Single Crystal Growth of the New Pressure-Induced-Superconductor CrAs via Chemical Vapor Transport.

ChemInform ◽

10.1002/chin.201629013 ◽

2016 ◽

Vol 47 (29) ◽

Author(s):

Xiangde Zhu ◽

Langsheng Ling ◽

Yuyan Han ◽

Junmin Xu ◽

Yongjian Wang ◽

...

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Chemical Vapor ◽

Single Crystal Growth ◽

Vapor Transport ◽

Chemical Vapor Transport

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Improved reproducibility in zinc oxide single crystal growth using chemical vapor transport

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2005.10.009 ◽

2006 ◽

Vol 286 (2) ◽

pp. 213-217 ◽

Cited By ~ 20

Author(s):

Makoto Mikami ◽

Takashi Sato ◽

JiFeng Wang ◽

Yoshihiko Masa ◽

Minoru Isshiki

Keyword(s):

Zinc Oxide ◽

Crystal Growth ◽

Single Crystal ◽

Chemical Vapor ◽

Single Crystal Growth ◽

Vapor Transport ◽

Chemical Vapor Transport

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SiC single crystal growth by a modified physical vapor transport technique

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.11.070 ◽

2005 ◽

Vol 275 (1-2) ◽

pp. e555-e560 ◽

Cited By ~ 31

Author(s):

Peter Wellmann ◽

Patrick Desperrier ◽

Ralf Müller ◽

Thomas Straubinger ◽

Albrecht Winnacker ◽

...

Keyword(s):

Crystal Growth ◽

Single Crystal ◽

Single Crystal Growth ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Transport Technique

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Multiple Donors in Zinc Oxide Substrates

MRS Proceedings ◽

10.1557/proc-719-f2.4 ◽

2002 ◽

Vol 719 ◽

Cited By ~ 2

Author(s):

K. Thonke ◽

N. Kerwien ◽

A. Wysmolek ◽

M. Potemski ◽

A. Waag ◽

...

Keyword(s):

Zinc Oxide ◽

Chemical Vapor ◽

Binding Energies ◽

Vapor Transport ◽

Chemical Vapor Transport ◽

Oxide Substrates ◽

Multiple Donors ◽

Major Donors ◽

Available Zinc ◽

Transport Technique

AbstractWe investigate by photoluminescence (PL) nominally undoped, commercially available Zinc Oxide substrates (from Eagle Picher) grown by seeded chemical vapor transport technique in order to identify residual donors and acceptors. In low temperature PL spectra the dominant emission comes from the decay of bound exciton lines at around 3.36 eV. Zeeman measurements allow the identification of the two strongest lines and some weaker lines in-between as donorrelated. From the associated two-electron satellite lines binding energies of the major donors of 48 meV and 55 meV, respectively, can be deduced.

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