Effect of crucible rotation on oxygen concentration during unidirectional solidification process of multicrystalline silicon for solar cells

2009 ◽  
Vol 311 (4) ◽  
pp. 1123-1128 ◽  
Author(s):  
Hitoshi Matsuo ◽  
R. Bairava Ganesh ◽  
Satoshi Nakano ◽  
Lijun Liu ◽  
Koji Arafune ◽  
...  
Keyword(s):  
Solar Cells ◽  
Oxygen Concentration ◽  
Solidification Process ◽  
Unidirectional Solidification ◽  
Multicrystalline Silicon ◽  
Crucible Rotation

scholarly journals Reduction of Oxygen Impurity in Multicrystalline Silicon Production

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Bing Gao ◽  
Satoshi Nakano ◽  
Koichi Kakimoto
Keyword(s):  
Gas Flow ◽  
Solidification Process ◽  
Unidirectional Solidification ◽  
Multicrystalline Silicon ◽  
Effective Control ◽  
Oxygen Impurity ◽  
High Quality ◽  
Argon Gas ◽  
Oxygen Generation ◽  
Impurity Transport

Effective control of oxygen impurity in multicrystalline silicon is required for the production of a high-quality crystal. The basic principle and some techniques for reducing oxygen impurity in multicrystalline silicon during the unidirectional solidification process are described in this paper. The oxygen impurity in multicrystalline silicon mainly originates from the silica crucible. To effectively reduce the oxygen impurity, it is essential to reduce the oxygen generation and enhance oxygen evaporation. For reduction of oxygen generation, it is necessary to prevent or weaken any chemical reaction with the crucible, and for the enhancement of oxygen evaporation, it is necessary to control convection direction of the melt and strengthen gas flow above the melt. Global numerical simulation, which includes heat transfer in global furnace, argon gas convection inside furnace, and impurity transport in both melt and gas regions, has been implemented to validate the above methods.

Sign in / Sign up

Export Citation Format

Share Document