In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

2013 ◽  
Vol 378 ◽  
pp. 34-36 ◽  
Author(s):  
M. Takahasi ◽  
Y. Nakata ◽  
H. Suzuki ◽  
K. Ikeda ◽  
M. Kozu ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Epitaxial Films ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

In situ three-dimensional X-ray reciprocal-space mapping of InGaAs multilayer structures grown on GaAs(001) by MBE

2015 ◽  
Vol 425 ◽  
pp. 13-15 ◽  
Author(s):  
Takuo Sasaki ◽  
Masamitu Takahasi ◽  
Hidetoshi Suzuki ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Three Dimensional ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Multilayer Structures ◽  
Reciprocal Space Mapping ◽  
X Ray

Reassembly and Oxidation of a Silver Nanoparticle Bilayer Probed by in Situ X-ray Reciprocal Space Mapping

2014 ◽  
Vol 118 (13) ◽  
pp. 7195-7201 ◽  
Author(s):  
Peter Siffalovic ◽  
Karol Vegso ◽  
Monika Benkovicova ◽  
Matej Jergel ◽  
Andrej Vojtko ◽  
...  
Keyword(s):  
Silver Nanoparticle ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray

scholarly journals Probing the domain structure of BiFeO3 epitaxial films with three-dimensional reciprocal space mapping

2014 ◽  
Vol 104 (18) ◽  
pp. 182901 ◽  
Author(s):  
Z. L. Luo ◽  
H. Huang ◽  
H. Zhou ◽  
Z. H. Chen ◽  
Y. Yang ◽  
...  
Keyword(s):  
Domain Structure ◽  
Three Dimensional ◽  
Epitaxial Films ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping

In situ Study of Strain Relaxation Mechanisms During Lattice-mismatched InGaAs/GaAs Growth by X-ray Reciprocal Space Mapping

2010 ◽  
Vol 1268 ◽  
Author(s):  
Takuo Sasaki ◽  
Hidetoshi Suzuki ◽  
Akihisa Sai ◽  
Masamitu Takahasi ◽  
Seiji Fujikawa ◽  
...  
Keyword(s):  
Film Thickness ◽  
Film Growth ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
In Situ Data ◽  
Dislocation Behavior

AbstractThe in situ X-ray reciprocal space mapping (in situ RSM) of symmetric diffraction measurements during lattice-mismatched InGaAs/GaAs(001) growth were performed to investigate the strain relaxation mechanisms. The evolution of the residual strain and crystal quality were obtained as a function of InGaAs film thickness. Based on the results, the correlation between the strain relaxation and the dislocations during the film growth were evaluated. As a result, film thickness ranges with different relaxation mechanisms were classified, and dominant dislocation behavior in each phase were deduced. From the data obtained in in situ measurements, the quantitative strain relaxation models were proposed based on a dislocation kinetic model developed by Dodson and Tsao. Good agreement between the in situ data and the model ensured the validity of the dominant dislocation behavior deduced from the present study.

scholarly journals A look inside epitaxial cobalt-on-fluorite nanoparticles with three-dimensional reciprocal space mapping using GIXD, RHEED and GISAXS

2013 ◽  
Vol 46 (4) ◽  
pp. 874-881 ◽  
Author(s):  
S. M. Suturin ◽  
V. V. Fedorov ◽  
A. M. Korovin ◽  
G. A. Valkovskiy ◽  
S. G. Konnikov ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Crystal Lattice ◽  
Three Dimensional ◽  
Grazing Incidence ◽  
High Energy ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Face Centered Cubic ◽  
Reciprocal Space Mapping ◽  
X Ray

In this work epitaxial growth of cobalt on CaF2(111), (110) and (001) surfaces has been extensively studied. It has been shown by atomic force microscopy that at selected growth conditions stand-alone faceted Co nanoparticles are formed on a fluorite surface. Grazing-incidence X-ray diffraction (GIXD) and reflection high-energy electron diffraction (RHEED) studies have revealed that the particles crystallize in the face-centered cubic lattice structure otherwise non-achievable in bulk cobalt under normal conditions. The particles were found to inherit lattice orientation from the underlying CaF2 layer. Three-dimensional reciprocal space mapping carried out using X-ray and electron diffraction has revealed that there exist long bright 〈111〉 streaks passing through the cobalt Bragg reflections. These streaks are attributed to stacking faults formed in the crystal lattice of larger islands upon coalescence of independently nucleated smaller islands. Distinguished from the stacking fault streaks, crystal truncation rods perpendicular to the {111} and {001} particle facets have been observed. Finally, grazing-incidence small-angle X-ray scattering (GISAXS) has been applied to decouple the shape-related scattering from that induced by the crystal lattice defects. Particle faceting has been verified by modeling the GISAXS patterns. The work demonstrates the importance of three-dimensional reciprocal space mapping in the study of epitaxial nanoparticles.

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