Numerical simulation of impurity transport under the effect of a gas flow guidance device during the growth of multicrystalline silicon ingots by the directional solidification process

2014 ◽  
Vol 385 ◽  
pp. 1-8 ◽  
Author(s):  
Ying-Yang Teng ◽  
Jyh-Chen Chen ◽  
Bo-Siang Huang ◽  
Ching-Hsin Chang
Keyword(s):  
Numerical Simulation ◽  
Directional Solidification ◽  
Gas Flow ◽  
Solidification Process ◽  
Multicrystalline Silicon ◽  
Impurity Transport ◽  
Directional Solidification Process ◽  
Guidance Device

The Numerical Simulation of Directional Solidification Process Temperature Field for Large-Scale Frustum of a Cone Ingot

2011 ◽  
Vol 189-193 ◽  
pp. 1476-1481
Author(s):  
Kun Liu ◽  
Zhe Wang ◽  
Ren Zhi Han ◽  
Zi Ping Ren
Keyword(s):  
Numerical Simulation ◽  
Mathematical Model ◽  
Temperature Field ◽  
Directional Solidification ◽  
Large Scale ◽  
Solidification Process ◽  
Directional Solidification Process ◽  
Ingot Quality ◽  
Fluent Software ◽  
The Mathematical Model

By using Fluent software, the mathematical model of temperature field is established on directional solidification process for large-scale frustum of a cone ingot, and the result is analyzed by Origin software, Tecplot. The influences of different width/thickness ratio to directional solidification process of cone ingot are discussed in order to provide basis for design optimization and ingot quality improvement.

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