Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1−xNx

2015 ◽  
Vol 432 ◽  
pp. 6-14 ◽  
Author(s):  
Hubert Valencia ◽  
Yoshihiro Kangawa ◽  
Koichi Kakimoto
Keyword(s):  
Ab Initio ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Ab Initio Study ◽  
Surface Stability

Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study

2020 ◽  
Vol 20 (7) ◽  
pp. 4358-4365
Author(s):  
Takumi Ohka ◽  
Toru Akiyama ◽  
Abdul Muizz Pradipto ◽  
Kohji Nakamura ◽  
Tomonori Ito
Keyword(s):  
Ab Initio ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Adsorption Behavior ◽  
Ab Initio Study ◽  
Step Edges

Facet stability of GaN during tri-halide vapor phase epitaxy: an ab initio-based approach

CrystEngComm ◽  
2021 ◽  
Vol 23 (6) ◽  
pp. 1423-1428
Author(s):  
Daichi Yosho ◽  
Yuriko Matsuo ◽  
Akira Kusaba ◽  
Pawel Kempisty ◽  
Yoshihiro Kangawa ◽  
...  
Keyword(s):  
Ab Initio ◽  
Phase Diagrams ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Crystal Shape ◽  
Surface Phase ◽  
Wulff Construction ◽  
Temperature And Pressure

An ab initio-based approach is used to study the facet stability of GaN during THVPE. The surface phase diagrams as functions of temperature and pressure are determined. Wulff construction is used to predict the crystal shape.

Ab initio calculation for an initial growth process of GaN on (0001) and (000$ \bar 1 $) surfaces by vapor phase epitaxy

2009 ◽  
Vol 6 (S2) ◽  
pp. S301-S304 ◽  
Author(s):  
Hikari Suzuki ◽  
Rie Togashi ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu
Keyword(s):  
Ab Initio ◽  
Vapor Phase ◽  
Ab Initio Calculation ◽  
Growth Process ◽  
Vapor Phase Epitaxy ◽  
Initial Growth

An ab initio study of Se-reacted GaAs(0 0 1) surfaces

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 80-84 ◽  
Author(s):  
W Faschinger
Keyword(s):  
Ab Initio ◽  
Ab Initio Study
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