Effect of Step Edges on Adsorption Behavior for GaN(0001) Surfaces during Metalorganic Vapor Phase Epitaxy: An Ab Initio Study

Crystal Growth & Design ◽

10.1021/acs.cgd.0c00117 ◽

2020 ◽

Vol 20 (7) ◽

pp. 4358-4365

Author(s):

Takumi Ohka ◽

Toru Akiyama ◽

Abdul Muizz Pradipto ◽

Kohji Nakamura ◽

Tomonori Ito

Keyword(s):

Ab Initio ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Adsorption Behavior ◽

Ab Initio Study ◽

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Effect of step edges on the adsorption behavior on vicinal AlN(0001) surface during metal-organic vapor phase epitaxy: an ab initio study

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2021.126244 ◽

2021 ◽

pp. 126244

Author(s):

Toru Akiyama ◽

Takumi Ohka ◽

Katsuya Nagai ◽

Tomonori Ito

Keyword(s):

Ab Initio ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Adsorption Behavior ◽

Ab Initio Study ◽

Organic Vapor ◽

Metal Organic ◽

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Ab initio-based study for surface reconstructions and adsorption behavior on semipolar AlN($11\bar{2}2$) surfaces during metal–organic vapor-phase epitaxy growth

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.085502 ◽

2015 ◽

Vol 54 (8) ◽

pp. 085502 ◽

Author(s):

Yoshitaka Takemoto ◽

Toru Akiyama ◽

Kohji Nakamura ◽

Tomonori Ito

Keyword(s):

Ab Initio ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Adsorption Behavior ◽

Organic Vapor ◽

Surface Reconstructions ◽

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Ab initio study of GaAs(100) surface stability over As2, H2 and N2 as a model for vapor-phase epitaxy of GaAs1−xNx

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2015.09.005 ◽

2015 ◽

Vol 432 ◽

pp. 6-14 ◽

Author(s):

Hubert Valencia ◽

Yoshihiro Kangawa ◽

Koichi Kakimoto

Keyword(s):

Ab Initio ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Ab Initio Study ◽

Surface Stability

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Development of GaN Growth Reaction Model Using Ab Initio Molecular Orbital Calculation and Computational Fluid Dynamics of Metalorganic Vapor-Phase Epitaxy

Journal of The Electrochemical Society ◽

10.1149/2.jes034205 ◽

2012 ◽

Vol 159 (5) ◽

pp. D270-D275 ◽

Author(s):

Hirooki Tokoi ◽

Atsushi Ohtake ◽

Kazutami Tago ◽

Kazutoshi Watanabe ◽

Tomoyoshi Mishima

Keyword(s):

Fluid Dynamics ◽

Computational Fluid Dynamics ◽

Ab Initio ◽

Molecular Orbital ◽

Vapor Phase ◽

Molecular Orbital Calculation ◽

Metalorganic Vapor Phase Epitaxy ◽

Reaction Model ◽

Vapor Phase Epitaxy ◽

Growth Reaction

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Density functional theory study on surface adsorptions in AlN metalorganic vapor phase epitaxy process

Applied Surface Science ◽

10.1016/j.apsusc.2020.148773 ◽

2021 ◽

Vol 544 ◽

pp. 148773

Author(s):

Peng Lin ◽

Nannan Niu ◽

Ran Zuo ◽

Yulong Fang ◽

Zhihong Feng

Keyword(s):

Density Functional Theory ◽

Vapor Phase ◽

Density Functional ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Density Functional Theory Study ◽

Functional Theory

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Selective-area growth and characterization of cubic GaN grown by metalorganic vapor phase epitaxy

Thin Solid Films ◽

10.1016/j.tsf.2020.138125 ◽

2020 ◽

Vol 709 ◽

pp. 138125

Author(s):

Pattana Suwanyangyaun ◽

Sakuntam Sanorpim ◽

Kentaro Onabe

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Area Growth ◽

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Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(91)90469-l ◽

1991 ◽

Vol 107 (1-4) ◽

pp. 268-273 ◽

Author(s):

M.A. Tischler ◽

R.M. Potemski ◽

T.F. Kuech ◽

F. Cardone ◽

M.S. Goorsky ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Acceptor Doping

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Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90130-9 ◽

1994 ◽

Vol 135 (3-4) ◽

pp. 423-433 ◽

Author(s):

J.M. Redwing ◽

T.F. Kuech ◽

D. Saulys ◽

D.F. Gaines

Keyword(s):

Gas Phase ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Silicon Doping ◽

Group V ◽

Gas Phase Chemistry ◽

Phase Chemistry

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Compensation of shallow impurities in oxygen‐doped metalorganic vapor phase epitaxy grown GaAs

Journal of Applied Physics ◽

10.1063/1.363811 ◽

1996 ◽

Vol 80 (12) ◽

pp. 6819-6826 ◽

Author(s):

J. W. Huang ◽

K. L. Bray ◽

T. F. Kuech

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Shallow Impurities

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Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.3462294 ◽

2010 ◽

Vol 97 (1) ◽

pp. 013502 ◽

Author(s):

Kuo-Hua Chang ◽

Jinn-Kong Sheu ◽

Ming-Lun Lee ◽

Shang-Ju Tu ◽

Chih-Ciao Yang ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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