Growth and electrical properties characterization of Pb(In 1/2 Nb 1/2 )O 3 –PbTiO 3 tetragonal single crystal by the modified flux-Bridgman method

2017 ◽  
Vol 468 ◽  
pp. 382-386 ◽  
Author(s):  
Kexin Song ◽  
Zhenrong Li ◽  
Shiji Fan ◽  
Ming Ma ◽  
Haisheng Guo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Bridgman Method ◽  
Properties Characterization

Growth and characterization of a gallium monosulfide (GaS) single crystal using the Bridgman method

2021 ◽  
pp. 126303
Author(s):  
Masaru Nakamura ◽  
Hiroaki Nakamura ◽  
Kiyoshi Shimamura ◽  
Naoki Ohashi
Keyword(s):  
Single Crystal ◽  
Bridgman Method

Optical and Electrical Properties of Cd Te Laser-Synthetized

1982 ◽  
Vol 13 ◽  
Author(s):  
L. Baufay ◽  
A. Pigeolet ◽  
R. Andrew ◽  
L.D. Laude
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Point Of View ◽  
Optical And Electrical Properties ◽  
Impurity States ◽  
Absorption Measurements ◽  
Forbidden Gap

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.

The growth and thermal, electrical properties characterization of Ba2TiSi2O8 piezoelectric crystal

2016 ◽  
Vol 451 ◽  
pp. 207-213 ◽  
Author(s):  
Shuoliang Cao ◽  
Bohan Jiang ◽  
Yanqing Zheng ◽  
Xiaoniu Tu ◽  
Kainan Xiong ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Piezoelectric Crystal ◽  
Properties Characterization

scholarly journals Structural and Electrical Properties Characterization of Sb1.52Bi0.48Te3.0 Melt-Spun Ribbons

Crystals ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 172 ◽  
Author(s):  
Viktoriia Ohorodniichuk ◽  
Anne Dauscher ◽  
Elsa Branco Lopes ◽  
Sylvie Migot ◽  
Christophe Candolfi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Melt Spun ◽  
Melt Spun Ribbons ◽  
Properties Characterization

Growth and Characterization of CDTE and CDTE Alloys

1989 ◽  
Vol 161 ◽  
Author(s):  
S. Mcdevitt ◽  
D.R. John ◽  
J.L. Sepich ◽  
K.A. Bowers ◽  
J.F. Schetzina ◽  
...  
Keyword(s):  
Single Crystal ◽  
Distribution Coefficients ◽  
Bridgman Method ◽  
Bridgman Technique ◽  
Vertical Bridgman Method ◽  
Dislocation Densities ◽  
Crystal Properties ◽  
Vertical Bridgman ◽  
The Difference

ABSTRACTMethods used to grow bulk, CdTe crystals, effects of alloying on their perfection and typical single crystal properties are reviewed in this paper. Crystals grown by a modified horizontal Bridgman technique have lower dislocation densities than those grown by a modified vertical Bridgman method. Dislocation densities of the order of 1×103/cm2 have been observed in CdTeSe crystals grown by the former technique. Due to the difference in the distribution coefficients of Zn and Se in CdTe, CdTeSe ingots are chemically more uniform than CdZnTe ingots. Purity studies of starting materials indicate that Se substitutions may introduce more impurities than Zn additions.

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