Optical and Electrical Properties of Cd Te Laser-Synthetized

1982 ◽  
Vol 13 ◽  
Author(s):  
L. Baufay ◽  
A. Pigeolet ◽  
R. Andrew ◽  
L.D. Laude
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Point Of View ◽  
Optical And Electrical Properties ◽  
Impurity States ◽  
Absorption Measurements ◽  
Forbidden Gap

ABSTRACTOptical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

scholarly journals Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond

2012 ◽  
Vol 14 (5) ◽  
pp. 053011 ◽  
Author(s):  
F Picollo ◽  
D Gatto Monticone ◽  
P Olivero ◽  
B A Fairchild ◽  
S Rubanov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Three Dimensional ◽  
Electrical Characterization ◽  
Single Crystal Diamond

Electrical Characterization of Low Temperature PECVD Oxides for TSV Applications

2018 ◽  
Vol 2018 (1) ◽  
pp. 000728-000733
Author(s):  
Piotr Mackowiak ◽  
Rachid Abdallah ◽  
Martin Wilke ◽  
Jash Patel ◽  
Huma Ashraf ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Charge Densities ◽  
Doped Silicon

Abstract In the present work we investigate the quality of low temperature Plasma Enhanced Chemical Vapor Deposition (PECVD) and plasma treated Tetraethyl orthosilicate (TEOS)-based TSV-liner films. Different designs of Trough Silicon Via (TSV) Test structures with 10μm and 20μm width and a depth of 100μm have been fabricated. Two differently doped silicon substrates have been used – highly p-doped and moderately doped. The results for break-through, resistivity and capacitance for the 20μm structures show a better performance compared to the 10μm structures. This is mainly due to increased liner thickness in the reduced aspect ratio case. Lower interface traps and oxide charge densities have been observed in the C-V measurements results for the 10μm structures.

Growth and Characterization of Single Crystal Epitaxial CoGa on MBE Grown III-V Semiconductors

1988 ◽  
Vol 144 ◽  
Author(s):  
K. C. Garrison ◽  
C. J. Palmstrøm ◽  
R. A. Bartynski
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Single Crystals ◽  
Structural Quality ◽  
High Quality ◽  
Auger Analysis ◽  
Post Deposition

ABSTRACTWe have demonstrated growth of high quality single crystal CoGa films on Ga1−xAlxAs. These films were fabricated in-situ by codeposition of Co and Ga on MBE grown Ga1−xAlxAs(100) surfaces. The elemental composition of the films was determined using Rutherford Backscattering (RBS) and in-situ Auger analysis. The structural quality of the films' surfaces was studied using RHEED (during deposition) and LEED (post deposition). RBS channeling was used to determine the bulk crystalline quality of these films.For ∼500 Å CoGa films grown at ∼450°C substrate temperature, channeling data showed good quality epitaxial single crystals [χmin ∼7%] with minimal dechanneling at the interface.

Investigations on structural, optical and electrical properties of phenyl benzoate single crystal

2018 ◽  
Vol 104 ◽  
pp. 43-48 ◽  
Author(s):  
Narayana Perumal Rajesh ◽  
V. Jabha Ananthi ◽  
G. Vinitha ◽  
C.K. Jayasankar
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Optical And Electrical Properties ◽  
Phenyl Benzoate

Structure, optical and electrical properties of CH3NH3SnI3 single crystal

2019 ◽  
Vol 563 ◽  
pp. 107-112 ◽  
Author(s):  
Y.Q. Huang ◽  
J. Su ◽  
Q.F. Li ◽  
D. Wang ◽  
L.H. Xu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Optical And Electrical Properties

The optical and electrical properties of silver azide and their relation to its decomposition

1958 ◽  
Vol 246 (1245) ◽  
pp. 250-253 ◽  
Keyword(s):  
Electrical Properties ◽  
Absorption Band ◽  
Room Temperature ◽  
Dielectric Constants ◽  
Optical And Electrical Properties ◽  
Silver Azide ◽  
Photo Conductivity ◽  
Mechanism And Kinetics ◽  
Kinetics Of ◽  
Absorption Measurements

In order to gain more information of the mechanism and kinetics of the decomposition of the metallic azides, we have recently made measurements of the high- and low- (radio-) frequency dielectric constants, the optical absorption, and the photo conductivity of silver azide. A complete description of this work has already bee published (McLaren & Rogers 1957) and therefore only a summary of the main results and conclusions will be given here. The absorption measurements have shown that for crystals ca . 4 x 10 -3 cm thick no measurable transmission occurs at wavelengths shorter than ca . 3000 Å, and that at liquid-air temperature there is an absorption band at 3590 Å which is not resolve at room temperature; these results have been interpreted in terms of the formation of excitons.

On the Electrical Characterization of High-ĸ Dielectrics

MRS Bulletin ◽  
2002 ◽  
Vol 27 (3) ◽  
pp. 222-225 ◽  
Author(s):  
R. Degraeve ◽  
E. Cartier ◽  
T. Kauerauf ◽  
R. Carter ◽  
L. Pantisano ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrode Materials ◽  
Gate Dielectric ◽  
Electrical Characterization ◽  
Complementary Metal Oxide Semiconductor ◽  
Dielectric Materials ◽  
Oxide Semiconductor ◽  
High Q ◽  
New Si

AbstractThe continual scaling of complementary metal oxide semiconductor (CMOS) technologies has pushed the Si-SiO2 system to its very limits and has led to the consideration of a number of alternative high-ĸ gate dielectric materials. In the end, it will be the electrical properties of the new Si/high-ĸ system that will determine its usefulness in future CMOS generations. For this reason, the study of the electrical properties of high-ĸ gate insulators is crucial. We present an overview of some of the electrical characterization techniques and reliability tests used to evaluate possible high-ĸ gate materials. Most of these techniques are well known from the characterization of SiO2 layers, but there are some additional complications, such as the presence of several different layers within one gate stack or the use of different gate electrode materials. These make the interpretation and comparison of experimental results more troublesome.

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