Magnetism of pure, disordered carbon films prepared by pulsed laser deposition

2004 ◽  
Vol 272-276 ◽  
pp. E839-E840 ◽  
Author(s):  
R. Höhne ◽  
K.-H. Han ◽  
P. Esquinazi ◽  
A. Setzer ◽  
H. Semmelhack ◽  
...  
2001 ◽  
Vol 73 (5) ◽  
pp. 531-534 ◽  
Author(s):  
H. Minami ◽  
D. Manage ◽  
Y.Y. Tsui ◽  
R. Fedosejevs ◽  
M. Malac ◽  
...  

2001 ◽  
Vol 10 (3-7) ◽  
pp. 900-904 ◽  
Author(s):  
Kenji Ebihara ◽  
Toshiyuki Nakamiya ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Shin-ichi Aoqui

2006 ◽  
Vol 252 (13) ◽  
pp. 4667-4671 ◽  
Author(s):  
Nikoletta Jegenyes ◽  
Zsolt Toth ◽  
Bela Hopp ◽  
Jozsef Klebniczki ◽  
Zsolt Bor ◽  
...  

2012 ◽  
Vol 79 (4) ◽  
pp. 664-669 ◽  
Author(s):  
A. N. Chumakov ◽  
S. A. Petrov ◽  
N. A. Bosak ◽  
E. N. Shcherbakova

1994 ◽  
Vol 349 ◽  
Author(s):  
M. P. Siegal ◽  
T. A. Friedmann ◽  
S. R. Kurtz ◽  
D. R. Tallant ◽  
R. L. Simpson ◽  
...  

ABSTRACTHighly tetrahedral-coordinated-amorphous-carbon (a-tC) films deposited by pulsed-laser deposition (PLD) on silicon substrates are studied. These films are grown at room-temperatures in a high-vacuum ambient. a-tC films grown in this manner have demonstrated stability to temperatures in excess of T = 1000°C, more than sufficient for any post-processing treatment or application. Film surfaces are optically smooth as determined both visually and by atomic-force microscopy. PLD growth parameters can be controlled to produce films with a range of sp2 - sp3 carbon-carbon bond ratios. Films with the highest yield of sp3 C-C bonds have high resistivity, with a dielectric permittivity constant s σ 4, measured capacitively at low frequencies (1 – 100 kHz). These a-tC films are p-type semiconductors as grown. Schottky barrier diode structures have been fabricated.


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