Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

1994 ◽  
Vol 349 ◽  
Author(s):  
M. P. Siegal ◽  
T. A. Friedmann ◽  
S. R. Kurtz ◽  
D. R. Tallant ◽  
R. L. Simpson ◽  
...  

ABSTRACTHighly tetrahedral-coordinated-amorphous-carbon (a-tC) films deposited by pulsed-laser deposition (PLD) on silicon substrates are studied. These films are grown at room-temperatures in a high-vacuum ambient. a-tC films grown in this manner have demonstrated stability to temperatures in excess of T = 1000°C, more than sufficient for any post-processing treatment or application. Film surfaces are optically smooth as determined both visually and by atomic-force microscopy. PLD growth parameters can be controlled to produce films with a range of sp2 - sp3 carbon-carbon bond ratios. Films with the highest yield of sp3 C-C bonds have high resistivity, with a dielectric permittivity constant s σ 4, measured capacitively at low frequencies (1 – 100 kHz). These a-tC films are p-type semiconductors as grown. Schottky barrier diode structures have been fabricated.

1994 ◽  
Vol 358 ◽  
Author(s):  
T. W. Mercer ◽  
N. J. DiNardo ◽  
L. J. Martinez-Miranda ◽  
F. Fang ◽  
T. A. Friedmann ◽  
...  

ABSTRACTThe structure and composition of tetrahedral-coordinated amorphous diamondlike carbon films (a-tC) grown by pulsed laser deposition (PLD) of graphite has been studied with atomic force microscopy (AFM). The nanometer-scale surface structure has been studied as a function of growth parameters (e.g., laser energy density and film thickness) using contact-mode and tapping-mode AFM. Although the surfaces were found to be generally smooth, they exhibited reproducible structural features on several size scales which correlate with the variation of laser energy and the effects of excited ion etching.


2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.


2017 ◽  
Vol 28 (17) ◽  
pp. 13053-13057 ◽  
Author(s):  
Yapeng Li ◽  
Yingfeng Li ◽  
Yonghong Zhang ◽  
Juncai Hou ◽  
Wenyi Liu ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 131
Author(s):  
Tingting Xiao ◽  
Qi Yang ◽  
Jian Yu ◽  
Zhengwei Xiong ◽  
Weidong Wu

FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.


2004 ◽  
Vol 272-276 ◽  
pp. E839-E840 ◽  
Author(s):  
R. Höhne ◽  
K.-H. Han ◽  
P. Esquinazi ◽  
A. Setzer ◽  
H. Semmelhack ◽  
...  

2001 ◽  
Vol 73 (5) ◽  
pp. 531-534 ◽  
Author(s):  
H. Minami ◽  
D. Manage ◽  
Y.Y. Tsui ◽  
R. Fedosejevs ◽  
M. Malac ◽  
...  

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