Thin p++ μc-Si layers for use as back surface field in p-type silicon heterojunction solar cells

2006 ◽  
Vol 352 (9-20) ◽  
pp. 1872-1875 ◽  
Author(s):  
H.D. Goldbach ◽  
A. Bink ◽  
R.E.I. Schropp
RSC Advances ◽  
2017 ◽  
Vol 7 (43) ◽  
pp. 26776-26782 ◽  
Author(s):  
Fengyou Wang ◽  
Yanbo Gao ◽  
Zhenyu Pang ◽  
Lili Yang ◽  
Jinghai Yang

Interface defects and the back surface field of p-type heterojunction solar cells are investigated for achieving high performance.


2011 ◽  
Vol 383-390 ◽  
pp. 267-271
Author(s):  
Gang Lu ◽  
Lu Zhang

A new structure of amorphous/ polycrystalline silicon heterojunction solar cells is reported. For a-Si (n+)/poly-Si (p)/poly-Si(p+) structure, the concentration, thickness, and the defect states of BSF are discussed. It is shown that the cell performance improves with thickness between 10-15nm, concentration is of the order of 1E19cm-3, the maximum efficiency up to 20.45%.


2019 ◽  
Vol 11 (35) ◽  
pp. 31851-31859 ◽  
Author(s):  
Yanping Song ◽  
Bin Yao ◽  
Yongfeng Li ◽  
Zhanhui Ding ◽  
Huanhuan Sun ◽  
...  

2017 ◽  
Vol 124 ◽  
pp. 384-391 ◽  
Author(s):  
Yuka Tomizawa ◽  
Yoshinori Ikeda ◽  
Haruhiko Itoh ◽  
Takashi Shiro ◽  
Jochen Loffler ◽  
...  

2008 ◽  
Vol 516 (20) ◽  
pp. 6782-6785 ◽  
Author(s):  
D. Muñoz ◽  
C. Voz ◽  
I. Martin ◽  
A. Orpella ◽  
R. Alcubilla ◽  
...  

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