The connection of icosahedral and defective icosahedral clusters in medium-range order structures of CuZrAl alloy

2019 ◽  
Vol 521 ◽  
pp. 119475 ◽  
Author(s):  
Lei Ren ◽  
Tinghong Gao ◽  
Rui Ma ◽  
Quan Xie ◽  
Zean Tian ◽  
...  
2007 ◽  
Vol 19 (41) ◽  
pp. 415114 ◽  
Author(s):  
B G Parkinson ◽  
D Holland ◽  
M E Smith ◽  
A P Howes ◽  
C R Scales

2020 ◽  
Vol 2 (9) ◽  
pp. 2961-2969
Author(s):  
Francesco Tavanti ◽  
Behnood Dianat ◽  
Alessandra Catellani ◽  
Arrigo Calzolari

2001 ◽  
Vol 675 ◽  
Author(s):  
Xidong Chen ◽  
J. Murray Gibson ◽  
John Sullivan ◽  
Tom Friedmann

ABSTRACTIn this paper, we have studied medium-range order structures in amorphous diamond-like carbon films with fluctuation microscopy. Medium-range order structures are quantified by a specific form of a general four-body correlation. We name this function as a pair-pair alignment correlation function. By analyzing speckle dark-field images taken over different areas as a function of momentum transfer in reciprocal space, we measured the pair-pair alignment correlation function for both thermally annealed samples and unannealed samples. We have found that thermal annealing introduces medium-range order in amorphous diamond-like carbon films, causing more pairs of atoms to be aligned. These results agree with density-functional simulations. Larger-scale simulations will be needed to fully understand our experimental results.


2004 ◽  
Vol 10 (S02) ◽  
pp. 798-799
Author(s):  
Xidong Chen ◽  
Jacqueline Johnson ◽  
Jon Hiller ◽  
Zhongyi Liu

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.


2004 ◽  
Vol 839 ◽  
Author(s):  
Xidong Chen ◽  
John Sullivan ◽  
Tom Friedmann ◽  
Dean Miller

ABSTRACTIn this paper, we have studied the relationship between medium-range order structures in and stress relaxation in amorphous diamond-like carbon films with fluctuation microscopy. Our preliminary results show strong correlation between stress relaxation and medium-range order. Our previous results showed that annealing films that had been through stress relaxation procedures caused great increase of medium-ranger order. In this paper, we have found that the increase of medium-range order in films that have been annealed before going through stress relaxation through removal of substrates is less pronounced than that of films that have been annealed after removal of substrates. We will discuss interpretations and implications of these results.


2010 ◽  
Vol 65 (1-2) ◽  
pp. 123-131 ◽  
Author(s):  
Oleksandr S. Roik ◽  
Oleksiy Samsonnikov ◽  
Volodymyr Kazimirov ◽  
Volodymyr Sokolskii

AbstractA local short-to-intermediate range order of liquid Al80Co10Ni10, Al72.5Co14.5Ni13, and Al65Co17.5Ni17.5 alloys was examined by X-ray diffraction and the reverse Monte Carlo modelling. The comprehensive analysis of three-dimensional models of the liquid ternary alloys was performed by means of the Voronoi-Delaunay method. The existence of a prepeak on the S(Q) function of the liquid alloys is caused by medium range ordering of 3d-transition metal atoms in dense-packed polytetrahedral clusters at temperatures close to the liquidus. The non-crystalline clusters, represented by aggregates of pentagons that consist of good tetrahedra, and chemical short-range order lead to the formation of the medium range order in the liquid binary Al-Ni, Al-Co and ternary Al-Ni-Co alloys.


1998 ◽  
Vol 540 ◽  
Author(s):  
J. M. Gibson ◽  
J-Y. Cheng ◽  
P. Voyles ◽  
M.M.J. TREACY ◽  
D.C. Jacobson

AbstractUsing fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.


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