Preparation of REE-doped Ge-based chalcogenide glasses with low hydrogen impurity content

2019 ◽  
Vol 525 ◽  
pp. 119669 ◽  
Author(s):  
A.P. Velmuzhov ◽  
M.V. Sukhanov ◽  
V.G. Plotnichenko ◽  
A.D. Plekhovich ◽  
V.S. Shiryaev ◽  
...  
1969 ◽  
Vol 7 (13) ◽  
pp. 937-939 ◽  
Author(s):  
L.C. Bobb ◽  
I. Lefkowitz ◽  
L. Muldawer

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-955-C4-958
Author(s):  
V. A. Ratobylskaja ◽  
L. A. Simonova

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-931-C4-934 ◽  
Author(s):  
M. F. Kotkata ◽  
M.B. El-den

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
T. Shiraishi ◽  
D. Adler

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-383-C4-386 ◽  
Author(s):  
S. G. Bishop ◽  
B. V. Shanabrook ◽  
U. Strom ◽  
P. C. Taylor

Author(s):  
А. А. Горват ◽  
В. М. Кришеник ◽  
А. Е. Кріштофорій ◽  
В. В. Мінькович ◽  
О. А. Молнар

2015 ◽  
Vol 11 (1) ◽  
pp. 2914-2917
Author(s):  
Alekberov R.I ◽  
Mekhtiyeva S.I ◽  
Isayev A.I ◽  
Mammadova H.I.

In work investigated with method IR of spectroscopy of amorphous selenium andsystem Se95As5 containing impurity samarium. It is certain that, in IR a spectrum of amorphous selenium due to hypervalent defects maxima with different intensity are observed in 230 and 270 cm-1.Increase of the concentration of impurity samarium in spectrum Se95As5, the maximum arises with 400cm-1frequency which, are connected with SmSe3 structural elements.


Sign in / Sign up

Export Citation Format

Share Document