scholarly journals Hydrogen storage characteristics of Ti– and V–based thin films

2016 ◽  
Vol 1 (2) ◽  
pp. 141-146 ◽  
Author(s):  
Z. Tarnawski ◽  
N.-T.H. Kim-Ngan
2006 ◽  
Vol 9 (11) ◽  
pp. A520 ◽  
Author(s):  
P. Vermeulen ◽  
R. A. H. Niessen ◽  
D. M. Borsa ◽  
B. Dam ◽  
R. Griessen ◽  
...  

JOM ◽  
2021 ◽  
Author(s):  
Jimoh Mohammed Abdul ◽  
Sharafadeen Kunle Kolawole ◽  
Ganiyat Abiodun Salawu

2011 ◽  
Vol 36 (1) ◽  
pp. 592-599 ◽  
Author(s):  
Rohit R. Shahi ◽  
T.P. Yadav ◽  
M.A. Shaz ◽  
O.N. Srivastava ◽  
S. van Smaalen

2004 ◽  
Vol 837 ◽  
Author(s):  
M. W. Zandbergen ◽  
S. W. H. Eijt ◽  
W. J. Legerstee ◽  
H. Schut ◽  
V. L. Svetchnikov

ABSTRACTThe hydrogen storage properties of nanostructured Mg and MgH2 thin films were studied as created by Ar and Ar+H2 plasma sputter deposition. Columnar structures with typical widths of ∼120 nm are observed with their long columnar axis extending throughout the thickness of the films. Applying substrate bias voltages during deposition results in narrower columns. A concomitant reduction in hydrogen desorption temperature from 400 °C to 360 °C is observed. Capping the Mg films with a ∼100 nm thin Pd layer leads to significantly reduced hydrogen desorption temperatures of ∼200 °C induced by the catalytic activity of the Pd cap layer. Also, hydrogen permeation of the films is strongly improved. The rate-determining factor is found to be the dissociation of the hydrogen molecules. Optimum hydrogen loading conditions of the Pd/Mg films were obtained just above ∼200 °C at hydrogen pressures of 0.25–1.0 MPa, resulting in hydrogen storage capacities in the range of 4–7 wt%.


2007 ◽  
Vol 15 (4) ◽  
pp. 593-598 ◽  
Author(s):  
Taizhong Huang ◽  
Zhu Wu ◽  
Guoxin Sun ◽  
Naixin Xu

2006 ◽  
Vol 22 (12) ◽  
pp. 1511-1515
Author(s):  
XIAO Xue-Zhang ◽  
◽  
◽  
CHEN Li-Xin ◽  
WANG Xin-Hua ◽  
...  

2006 ◽  
Vol 14 (4) ◽  
pp. 361-366 ◽  
Author(s):  
Rui Tang ◽  
Yongning Liu ◽  
Changchun Zhu ◽  
Jiewu Zhu ◽  
Guang Yu

1999 ◽  
Vol 289 (1-2) ◽  
pp. 244-250 ◽  
Author(s):  
Sung-Wook Cho ◽  
Chang-Suck Han ◽  
Choong-Nyeon Park ◽  
Etsuo Akiba

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