Effect of annealing temperature on properties of ZnO:Al thin films prepared by pulsed DC reactive magnetron sputtering

2015 ◽  
Vol 139 ◽  
pp. 279-283 ◽  
Author(s):  
Chaoying Liu ◽  
Zhiwei Xu ◽  
Yanfang Zhang ◽  
Jing Fu ◽  
Shuguang Zang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Pulsed Dc ◽  
Dc Reactive Magnetron Sputtering

Pulsed DC Reactive Magnetron Sputtering of AlN Thin Films on High Frequency LTCC Substrates

2003 ◽  
Vol 783 ◽  
Author(s):  
Jung W. Lee ◽  
Jerome J. Cuomo ◽  
Baxter F. Moody ◽  
Yong S. Cho ◽  
Roupen L. Keusseyan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Crystal Orientation ◽  
Broad Band ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Pulsed Dc ◽  
Dc Reactive Magnetron Sputtering ◽  
Small Grains ◽  
Xrd Patterns

ABSTRACTThis preliminary work reports the preparation of AlN thin films on an LTCC (low temperature co-fired ceramics) substrate by pulsed dc reactive magnetron sputtering and the limited characterization focusing on microstructure and crystal orientation. The main focus will be placed on the effects of changing pulsed frequency. The AlN thin film showed good adhesion with the substrate and columnar structures having small grains regardless of pulsed frequency. The crystal orientation of AlN thin films was dependent on pulsed frequency according to the result of XRD patterns. The preferred (002) orientation was obtained at a pulsed frequency of 100 kHz. The broad band of 300 to 650 nm observed in photoluminescence spectrum was believed due to defects associated with the presence of oxygen impurities.

Characterization of inhomogeneity in TiO2 thin films prepared by pulsed dc reactive magnetron sputtering

2011 ◽  
Vol 520 (1) ◽  
pp. 272-279 ◽  
Author(s):  
M. Horprathum ◽  
P. Eiamchai ◽  
P. Chindaudom ◽  
N. Nuntawong ◽  
V. Patthanasettakul ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Tio2 Thin Films ◽  
Pulsed Dc ◽  
Dc Reactive Magnetron Sputtering

Influence of Annealing Temperature on Microstructural and Optical Properties of TiN Thin Films Deposited by DC Reactive Magnetron Sputtering

2013 ◽  
Vol 770 ◽  
pp. 197-200
Author(s):  
T. Rattana ◽  
N. Witit-Anun ◽  
S. Suwanboon ◽  
S. Chaiyakun
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Annealing Temperatures ◽  
Dc Reactive Magnetron Sputtering ◽  
Spherical Structures ◽  
Tin Thin Films

Polycrystalline TiN thin films were deposited on silicon and quartz substrates by DC reactive magnetron sputtering technique. The as-prepared thin films were annealed in air at various temperatures ranging between 400 °C to 700 °C. The effect of annealing temperatures on the microstructural and optical properties have been investigated by field emission scanning electron microscope, Raman scattering spectroscopy and UVVis spectrophotometer, respectively. The raman results indicated the presence of the rutile TiO2 phase for the samples annealed above 500°C. Many hollow-spherical structures appeared on the surface of films annealed at about 600 °C and the hollow-spherical structures occurred increasingly as a function of annealing temperatures. In addition, the optical properties of thin films depended strongly on annealing temperature.

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