Structural and optical properties of diamond like thin films deposited by asymmetric bipolar pulsed-DC reactive magnetron sputtering

2008 ◽  
Vol 202 (11) ◽  
pp. 2354-2357 ◽  
Author(s):  
M. Rubio-Roy ◽  
E. Pascual ◽  
M.C. Polo ◽  
J.L. Andújar ◽  
E. Bertran
2014 ◽  
Vol 979 ◽  
pp. 431-434 ◽  
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao

In this article, amorphous tantalum oxide thin films were deposited by dc reactive magnetron sputtering onto silicon (001) wafer and glass slide substrates. Sputtering power has been varied for optimizing thin film quality. The structural and optical properties of the Ta2O5 thin films were investigated by using X-ray diffraction, UV-Vis spectrophotometer and spectroscopic ellipsometry respectively. The XRD pattern result indicates that the films are amorphous. It was found that the growth rate was also increased with increasing dc power up to 250 W, and the maximum growth rate observed at 250 W was 0.25 nm/s. In addition, the refractive index and packing density of the films increases with increasing dc sputtering power.


2003 ◽  
Vol 783 ◽  
Author(s):  
Jung W. Lee ◽  
Jerome J. Cuomo ◽  
Baxter F. Moody ◽  
Yong S. Cho ◽  
Roupen L. Keusseyan

ABSTRACTThis preliminary work reports the preparation of AlN thin films on an LTCC (low temperature co-fired ceramics) substrate by pulsed dc reactive magnetron sputtering and the limited characterization focusing on microstructure and crystal orientation. The main focus will be placed on the effects of changing pulsed frequency. The AlN thin film showed good adhesion with the substrate and columnar structures having small grains regardless of pulsed frequency. The crystal orientation of AlN thin films was dependent on pulsed frequency according to the result of XRD patterns. The preferred (002) orientation was obtained at a pulsed frequency of 100 kHz. The broad band of 300 to 650 nm observed in photoluminescence spectrum was believed due to defects associated with the presence of oxygen impurities.


2011 ◽  
Vol 520 (1) ◽  
pp. 272-279 ◽  
Author(s):  
M. Horprathum ◽  
P. Eiamchai ◽  
P. Chindaudom ◽  
N. Nuntawong ◽  
V. Patthanasettakul ◽  
...  

2006 ◽  
Vol 297 (2) ◽  
pp. 411-418 ◽  
Author(s):  
F.F. Yang ◽  
L. Fang ◽  
S.F. Zhang ◽  
K.J. Liao ◽  
G.B. Liu ◽  
...  

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