scholarly journals Bipolar resistive switching on TiO2/Au by conducting Atomic Force Microscopy

2019 ◽  
Vol 14 ◽  
pp. 100-103
Author(s):  
M. Linares Moreau ◽  
M. Barella ◽  
L. López Mir ◽  
N. Ghenzi ◽  
F. Golmar ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Force Microscopy ◽  
Atomic Force

Multimode resistive switching in nanoscale hafnium oxide stack as studied by atomic force microscopy

2016 ◽  
Vol 109 (2) ◽  
pp. 023508 ◽  
Author(s):  
Y. Hou ◽  
U. Celano ◽  
L. Goux ◽  
L. Liu ◽  
R. Degraeve ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Resistive Switching ◽  
Hafnium Oxide ◽  
Force Microscopy ◽  
Atomic Force

scholarly journals Noise and Electrical Oscillations Generation during the Investigation of the Resistive Switching in the Yttria Stabilized Zirconia Films by Conductive Atomic Force Microscopy

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Oleg Gorshkov ◽  
Dmitry Filatov ◽  
Dmitry Antonov ◽  
Ivan Antonov
Keyword(s):  
Atomic Force Microscopy ◽  
Resistive Switching ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Oscillation Loop ◽  
In Series

The effect of resistive switching in the yttria stabilized zirconia (YSZ) thin films on Si substrates has been studied by Conductive Atomic Force Microscopy (CAFM). The resistive switching of the YSZ films from the low conductive state to the highly conductive one has been found to be associated with the increasing of the noise with broad frequency spectrum related to the redistribution of the oxygen vacancies in YSZ. The electrical oscillations in oscillation loop connected in series to the CAFM probe, the sample, and the bias source related to the excitation of the oscillation loop by the noise in the probe-to-sample contact film have been observed. The effect discovered is promising for application in the memristor devices of new generation.

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