Theoretical study of intermediate valence fluctuation in thulium selenide and electrical properties of TmSe1−xTex

Author(s):  
S. Ariponnammal ◽  
S. Anusha ◽  
S. Shalini
2011 ◽  
Vol 25 (27) ◽  
pp. 3663-3670
Author(s):  
S. ARIPONNAMMAL ◽  
S. K. RATHIHA

Europium chalcogenides receive greater interest because of their interesting properties such as valence transition, semiconductor to metallic transition and structural phase transition etc. In this paper, the charge transfer in Europium Sulphide ( EuS ) is analyzed by experimental and theoretical X-ray diffraction (XRD) data. The direction and amount of charge transfer are inferred by plotting and comparing the structure factors of the components. The charge transfer parameter thus obtained is 0.29 electron from Eu to S which confirms the intermediate valence fluctuation. Further, the charge transfer in EuS , EuSe and EuTe , is found to be decreasing with the increase of lattice constant and energy gap which correlates the valency and lattice size.


1983 ◽  
Vol 103 (4) ◽  
pp. 507-522 ◽  
Author(s):  
Mitsuo Kawato ◽  
Nakaakira Tsukahara

2020 ◽  
Vol 40 (8) ◽  
pp. 3049-3056 ◽  
Author(s):  
Yongcheng Lu ◽  
Yuanxun Li ◽  
Daming Chen ◽  
Rui Peng ◽  
Qinghui Yang ◽  
...  

1993 ◽  
Vol 59 (1-3) ◽  
pp. 54-58
Author(s):  
R.J. Seeböck ◽  
W.E. Köhler ◽  
M. Römheld ◽  
U. Zellhuber

2009 ◽  
Vol 130 (23) ◽  
pp. 234907 ◽  
Author(s):  
José M. Granadino-Roldán ◽  
Andrés Garzón ◽  
Gregorio García ◽  
Tomás Peña-Ruiz ◽  
M. Paz Fernández-Liencres ◽  
...  

1997 ◽  
Vol 482 ◽  
Author(s):  
J. Eisner ◽  
M. Haugk ◽  
R. Gutierrez ◽  
Th. Frauenheim

AbstractWe present a theoretical study of atomic structures, electrical properties and formation energies for a variety of possible reconstructions with 1×1 and 2×2 periodicity of the GaN(0001) and (0001) surfaces. We find that during MBE growth in the (0001) direction 2×2 structures become stable under N rich growth conditions while Ga rich environment should yield structures with 1×1 periodicity. Considering MBE growth on (0001) surfaces, among the investigated structures only those with 1×1 periodicity are predicted to be stable. During MOCVD growth, where H terminated surfaces may occur, only structures with lx1 periodicity are found to be stable for both growth directions.


2020 ◽  
Vol 535 ◽  
pp. 110778
Author(s):  
F.N.N. Pansini ◽  
M. de Campos ◽  
A.C. Neto ◽  
C.S. Sergio

2015 ◽  
Vol 70 (4) ◽  
pp. 265-277
Author(s):  
Marco Wendorff ◽  
Caroline Röhr

AbstractStarting from the new compound SrHg2Sn2, which is isoelectronic and also isotypic to the indide SrIn4, the successive substitution of Sn against the electron poor Hg has been investigated in a combined synthetic, crystallographic, and bond-theoretical study. Along the 1:4 section Sr(Hg1–xSnx)4 a series of compounds with Sn contents x between 0.5 and 0.2 were synthesized from stoichiometric ratios of the elements. Their crystal structures, which represent three different variants of the EuIn4-type structure, have been determined using single crystal X-ray data. The most electron rich compound SrHg2Sn2 crystallizes in the original EuIn4-type [monoclinic, C2/m, a = 1257.9(14), b = 490.1(4), c = 997.8(12) pm, β = 117.60(6)°, Z = 4, R1 = 0.0838], with a fully ordered Hg and Sn distribution. The four atom sites form two different folded ladders with an alternating Hg/Sn distribution. Like in the KHg2-type, the ladders are connected via six-membered rings. In between, double tubes with an internal Sn–Sn bond are connected via further Sn–Sn bonds to form sheets similar to those observed in SiAs. The most electron-poor phase SrHg3.2Sn0.8 crystallizes in a strongly distorted variant of this structure [a = 1172.8(4), b = 497.9(2), c = 1010.0(4) pm, β = 118.860(7)°, Z = 4, R1 = 0.0549]. Herein, additional Hg–Hg bonds are formed, and the open tubes are distorted into rods of edge-sharing rhombohedra resembling the structure motifs of elemental Hg. At an intermediate valence electron (v.e.) number, i.e., in SrHg2.5Sn1.5, an isomorphous tripled superstructure (a = 2704.4(5), b = 493.87(7), c = 1197.1(2) pm, β = 90.838(14)°, Z = 12, R1 = 0.0475) occurs, where the building blocks of the two variants of the EuIn4-type structure alternate in a 1:2 ratio. The bonding situation and the “coloring,” i.e., the Hg/Sn distribution in the polyanionic network, are discussed considering the different sizes of the atoms and the charge distribution (Bader AIM charges), which has been calculated within the framework of the FP-LAPW density functional theory for SrHg2Sn2 and the model compounds “SrHg3Sn” and “SrHg4.”


2007 ◽  
Author(s):  
Zhigang Zhu ◽  
Arunabhiram Chutia ◽  
Riadh Sahnoun ◽  
Hideyuki Tsuboi ◽  
Michihisa Koyama ◽  
...  

2012 ◽  
Author(s):  
A. Coens ◽  
M. Chakaroun ◽  
A. P. Fischer ◽  
M. W. Lee ◽  
A. Boudrioua ◽  
...  

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