Experimental and theoretical study on enhanced electrical properties of nickel-substituted La0.5Sr0.5CoO3−δ ceramics

2020 ◽  
Vol 40 (8) ◽  
pp. 3049-3056 ◽  
Author(s):  
Yongcheng Lu ◽  
Yuanxun Li ◽  
Daming Chen ◽  
Rui Peng ◽  
Qinghui Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Theoretical Study

Theoretical study on electrical properties of dendritic spines

1983 ◽  
Vol 103 (4) ◽  
pp. 507-522 ◽  
Author(s):  
Mitsuo Kawato ◽  
Nakaakira Tsukahara
Keyword(s):  
Electrical Properties ◽  
Dendritic Spines ◽  
Theoretical Study

Experimental and theoretical study of the electrical properties of a triode reactor

1993 ◽  
Vol 59 (1-3) ◽  
pp. 54-58
Author(s):  
R.J. Seeböck ◽  
W.E. Köhler ◽  
M. Römheld ◽  
U. Zellhuber
Keyword(s):  
Electrical Properties ◽  
Theoretical Study

Theoretical study of the effect of ethynyl group on the structure and electrical properties of phenyl-thiadiazole systems as precursors of electron-conducting materials

2009 ◽  
Vol 130 (23) ◽  
pp. 234907 ◽  
Author(s):  
José M. Granadino-Roldán ◽  
Andrés Garzón ◽  
Gregorio García ◽  
Tomás Peña-Ruiz ◽  
M. Paz Fernández-Liencres ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Theoretical Study ◽  
Ethynyl Group ◽  
Conducting Materials

Theory of Ga, N and H terminated GaN (0001)/(0001) surfaces

1997 ◽  
Vol 482 ◽  
Author(s):  
J. Eisner ◽  
M. Haugk ◽  
R. Gutierrez ◽  
Th. Frauenheim
Keyword(s):  
Electrical Properties ◽  
Theoretical Study ◽  
Growth Conditions ◽  
Mbe Growth ◽  
Atomic Structures ◽  
Mocvd Growth ◽  
Formation Energies

AbstractWe present a theoretical study of atomic structures, electrical properties and formation energies for a variety of possible reconstructions with 1×1 and 2×2 periodicity of the GaN(0001) and (0001) surfaces. We find that during MBE growth in the (0001) direction 2×2 structures become stable under N rich growth conditions while Ga rich environment should yield structures with 1×1 periodicity. Considering MBE growth on (0001) surfaces, among the investigated structures only those with 1×1 periodicity are predicted to be stable. During MOCVD growth, where H terminated surfaces may occur, only structures with lx1 periodicity are found to be stable for both growth directions.

Theoretical study of the electronic structure and electrical properties of Al-doped niobium clusters

2020 ◽  
Vol 535 ◽  
pp. 110778
Author(s):  
F.N.N. Pansini ◽  
M. de Campos ◽  
A.C. Neto ◽  
C.S. Sergio
Keyword(s):  
Electronic Structure ◽  
Electrical Properties ◽  
Theoretical Study

Theoretical Study on Electronic and Electrical Properties of Nano Structural ZnO

2007 ◽  
Author(s):  
Zhigang Zhu ◽  
Arunabhiram Chutia ◽  
Riadh Sahnoun ◽  
Hideyuki Tsuboi ◽  
Michihisa Koyama ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Theoretical Study

Experimental and theoretical study of the optical and electrical properties optimization of an OLED in a microcavity

2012 ◽  
Author(s):  
A. Coens ◽  
M. Chakaroun ◽  
A. P. Fischer ◽  
M. W. Lee ◽  
A. Boudrioua ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Theoretical Study ◽  
Optical And Electrical Properties

Modeling the Dependence of Power Diode on Temperature and Radiation

2015 ◽  
Vol 6 (2) ◽  
pp. 216
Author(s):  
S.M. El-Ghanam ◽  
A.M. Abd El-Maksood ◽  
F.A.S. Soliman
Keyword(s):  
Electrical Properties ◽  
Gamma Rays ◽  
Radiation Effects ◽  
Theoretical Study ◽  
Diffusion Length ◽  
Operating Conditions ◽  
Power Diodes ◽  
Dose Levels ◽  
Power Diode ◽  
Radiation Type

<p class="Style1">A theoretical study had been carried out on the effect of radiation on the electrical properties of silicon power diodes. Computer program "PDRAD2013" was developed to solve the diode equations and to introduce the operating conditions and radiation effects upon its parameters. Temperature increase interrupts the electrical properties of the diode in the direction of drop voltage decrease across the p-n junction.. The model was analyzed under the influence of different radiation type (gamma-rays, neutrons, protons and electrons) with various dose levels and energies. The carriers diffusion length were seriously affected leading to a large increase in the forward voltage. These effects were found to be function of radiation type, fluence and energy.</p>

Unaffected electrical resistance with change of sample sizes: A theoretical study on some electrical parameters of silicene

2019 ◽  
Vol 33 (02) ◽  
pp. 1950010
Author(s):  
D. K. Das ◽  
Jit Sarkar
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Electrical Resistance ◽  
Theoretical Study ◽  
The Other ◽  
Tunneling Effect ◽  
Sample Sizes ◽  
Lorenz Number ◽  
Electrical Parameters ◽  
Temperature Range

Silicene, the honeycomb 2D structured silicon, is addressed as cousin of graphene, by many researchers. Its unique properties draw the attention of researchers round the globe. Electrical properties of silicene are also reported by other researchers. In this paper, we estimate electrical resistivity, electrical conductivity and Lorenz number for silicene within the temperature range from 100 K to 500 K. Variation of these parameters with respect to sample size is also reported. The novelty of our work is that till now the Lorenz number and variation of electrical properties within this wide temperature range of 100–500 K for silicene have not yet been reported. We also observed that with variation of sample sizes electrical resistance of silicene sheet remains unaffected whereas the other electrical properties vary. This is due to tunneling effect of semiconductors, which is due to uneven distribution of atoms (buckled structure) in planes.

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