Effect of conventional and microwave sintering on microstructure and ferroelectric properties of sodium bismuth titanate (NBT) perovskite ceramics

Dielectric studies were carried out on a lead free Sodium Bismuth Titanate, NBT, ( Na 0.5 Bi 0.5 TiO 3) composition. The material was synthesized by conventional ceramic method (CS) and microwave sintering (MS). The presence of single phase has been confirmed by X-ray diffraction and scanning electron microscopy of NBT ceramic. The later technique (MS) resulted in material with high density, dielectric properties and improved microstructure. The transition temperature was observed slightly higher for microwave sintered (MS) material. Longitudinal modulus measurements are very sensitive property to identify the phase transitions in ceramics. Longitudinal modulus (L) measurements were also employed on these samples in the frequency 136 kHz and can be studied in the wide temperature range 30°C to 400°C. The elastic behavior (L) showed a break at two temperatures (~200°C and 350°C) in both the conventional and microwave sintered ceramics. In NBT ceramics, permittivity anomalies are connected to modulus anomalies. The results are correlated with the dielectric measurements. This behavior explained in the light of structural phase transitions in the ferroelectric ceramics.

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Phase formation and relaxor properties of lead-free perovskite ceramics on the base of sodium-bismuth titanate (Na0.5Bi0.5)(Ti,Mg)O3

Ferroelectrics ◽

10.1080/00150193.2020.1722882 ◽

2020 ◽

Vol 560 (1) ◽

pp. 48-53

Author(s):

E. D. Politova ◽

D. A. Strebkov ◽

D. A. Belkova ◽

G. M. Kaleva ◽

A. V. Mosunov ◽

...

Keyword(s):

Phase Formation ◽

Bismuth Titanate ◽

Lead Free ◽

Sodium Bismuth Titanate ◽

Perovskite Ceramics

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Enhanced dielectric and ferroelectric properties of Ca[sup 2+] substituted sodium bismuth titanate

10.1063/1.4791533 ◽

2013 ◽

Author(s):

Chandrahas Bharti ◽

A. Sen ◽

T. P. Sinha

Keyword(s):

Bismuth Titanate ◽

Ferroelectric Properties ◽

Sodium Bismuth Titanate

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Fabrication of the Cobalt Ferrite/Modified Sodium Bismuth Titanate 0-3 Multiferroic Composites via Diffusion-blocking

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2011.00486 ◽

2011 ◽

Vol 26 (5) ◽

pp. 486-490 ◽

Cited By ~ 1

Author(s):

Quan-Wei HAN ◽

Kun LI ◽

Song PENG ◽

Yu WANG ◽

Helen Lai-Wa CHAN

Keyword(s):

Cobalt Ferrite ◽

Bismuth Titanate ◽

Sodium Bismuth Titanate

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Stress- and frequency-dependent properties of relaxor-like sodium bismuth titanate

Physical Review B ◽

10.1103/physrevb.103.094113 ◽

2021 ◽

Vol 103 (9) ◽

Author(s):

Kevin Riess ◽

Neamul H. Khansur ◽

Alexander Martin ◽

Andreja Benčan ◽

Hana Uršič ◽

...

Keyword(s):

Bismuth Titanate ◽

Sodium Bismuth Titanate ◽

Frequency Dependent

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Fabrication of V-Substituted (Bi,M)4Ti3O12 [M = Lanthanoids] Thin Films by Chemical Solution Deposition Method

MRS Proceedings ◽

10.1557/proc-688-c2.3.1 ◽

2001 ◽

Vol 688 ◽

Cited By ~ 2

Author(s):

H. Uchida ◽

H. Yoshikawa ◽

I. Okada ◽

H. Matsuda ◽

T. Iijima ◽

...

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Bismuth Titanate ◽

Ferroelectric Properties ◽

Ferroelectric Materials ◽

Processing Temperature ◽

Chemical Solution ◽

Si Substrate ◽

Solution Deposition ◽

Chemical Solution Deposition Method

AbstractBismuth titanate (Bi4Ti3O12; BIT) -based ferroelectric materials are proposed from the view of the “Site-engineering”, where the Bi-site ions are substituted by lanthanoid ions (La3+ and Nd3+) and Ti-site ions by other ions with higher charge valence (V5+). In the present study, influences of vanadium (V) - substitution for (Bi,M)4Ti3O12 thin films [M = lanthanoid] on the ferroelectric properties are evaluated. V-substituted (Bi,M)4Ti3O12 films have been fabricated using a chemical solution deposition (CSD) technique on the (111)Pt/Ti/SiO2/(100)Si substrate. Remnant polarization of (Bi,La)4Ti3O12 and (Bi,Nd)4Ti3O12 films has been improved by the V-substitution independent of the coercive field. The processing temperature of BLT and BNT films could also be lowered by the V-substitution.

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