Competitive failure mechanism and load tolerance of solder joint under thermo-mechano-electrical coupling

2021 ◽  
pp. 104104
Author(s):  
Zhipeng Zhao ◽  
Xiaomin Zhang ◽  
Zhouzhi Wu ◽  
Yuan Liang ◽  
Deqiang Yin
2019 ◽  
Vol 99 ◽  
pp. 12-18 ◽  
Author(s):  
Qi-hai Li ◽  
Cai-Fu Li ◽  
Wei Zhang ◽  
Wei-wei Chen ◽  
Zhi-Quan Liu

Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


1999 ◽  
Vol 11 (1) ◽  
pp. 117-135
Author(s):  
P. Dineva ◽  
D. Gross ◽  
T. Rangelov

2010 ◽  
Vol 48 (11) ◽  
pp. 1035-1040 ◽  
Author(s):  
Young-Chul Lee ◽  
Kwang-Seok Kim ◽  
Ji-Hyuk Ahn ◽  
Jeong-Won Yoon ◽  
Min-Kwan Ko ◽  
...  

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