Optimized ink-jet printing condition for stable and reproducible performance of organic thin film transistor

2013 ◽  
Vol 111 ◽  
pp. 242-246 ◽  
Author(s):  
Dong-Hoon Lee ◽  
Ki-Tae Lim ◽  
Eung-Kyu Park ◽  
Jung-Min Kim ◽  
Yong-Sang Kim
2007 ◽  
Vol 515 (19) ◽  
pp. 7692-7696 ◽  
Author(s):  
Dongjo Kim ◽  
Sunho Jeong ◽  
Sul Lee ◽  
Bong Kyun Park ◽  
Jooho Moon

2007 ◽  
Vol 90 (5) ◽  
pp. 053504 ◽  
Author(s):  
Dae Ho Song ◽  
Min Hee Choi ◽  
June Young Kim ◽  
Jin Jang ◽  
S. Kirchmeyer

2010 ◽  
Vol 10 (4) ◽  
pp. e161-e165 ◽  
Author(s):  
Sun Hee Lee ◽  
Sung Hoon Kim ◽  
Dong Joon Choo ◽  
Jin Jang

2019 ◽  
Vol 16 (9) ◽  
pp. 261-265
Author(s):  
Jung-Min Kim ◽  
Jae-Kyoung Kim ◽  
Tae-Sik Yoon ◽  
Yong-Sang Kim

2006 ◽  
Vol 937 ◽  
Author(s):  
Dongjo Kim ◽  
Sunho Jeong ◽  
Sul Lee ◽  
Bong-Kyun Park ◽  
Jooho Moon

ABSTRACTIn this work, we here developed a conductive ink which contains silver nano-particles from which the electrodes for organic thin film transistor were directly patterned by ink-jet printing. Nano-sized silver particles having ∼ 20nm diameter was used for the direct metal printing. Silver conductive ink was printed on the heavily doped n-type silicon wafer with 200-nm thick thermal SiO2 layer as a substrate. To achieve a high line resolution and smooth conductive path, the printing conditions such as the inter-drop distance, stage moving velocity and temperature of the pre-heated substrates were optimized. After the heat-treatment at temperatures of about 100 ∼ 300 ° for 30 min, the printed silver patterns exhibit metal-like appearance and the conductivity. To fabricate a coplanar type TFTs, an active material of semiconducting polymer, which was dissolved in a proper solvent, was deposited between the ink-jet printed silver electrodes by solution process. The output and transfer characterization was measured in air. The OTFT with the ink-jetted source/drain electrodes show a mobility of 1.3 × 10−3 cm2 V−1 s−1 in the saturation regime and on/off current ratio over 103 and a threshold voltage of about −13 V.


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