Design of Low Voltage Quasi-floating Self Cascode Current Mirror

In this paper, a modified structure of self-cascode structure is proposed. In the proposed structure, the MOSFET working in saturation mode is replaced by a Quasi-floating gate MOSFET by which the threshold voltage can be scaled, resulting in an increase in the drain-to-source voltage of other MOSFET operating in the linear region. The increased drain-to-source voltage results in a change in the operating region, which here is from linear to saturation regime. To exploit the performance of the proposed structure, the design of the current mirror circuit is shown in this paper. The proposed architecture when compared with its conventional design showed improvement in performance without affecting the other parameters. The complete design is done using MOSFET models of 180nm technology using Spice at supply dual supply of 0.5V.

Nonlinear Analytical Model of Localized Sub-THz and THz Rectifications in FET Power Detectors

<div>A nonlinear analytical model for THz FET power detectors based on their distributed RC network is presented. This empirical model works well for both drain-unbiased and drain-biased THz FET responses. The physics-based analysis reveals that localized THz rectifications in long channel transistors may be mathematically expressed in the same way as regular RF frequency rectifications of a single lumped device. However, the one lumped FET model can’t work properly at THz frequencies without correct definitions of THz signals on its terminals and independently considers localized rectifications on the source and drain sides. An improved compact one lumped THz FET power detector model with additional Schottky diodes at the source and drain terminals is presented. THz FET detector can also perform a simultaneous self-amplification (active rectification) of the localized THz rectified dc signal when operates in the saturation regime beyond its unity gain frequency. A novel analytical expression for the localized THz dc rectified response is developed for FETs operating in the saturation regime. The presented physics-based model agrees excellently with the measured experimental results of GaAs HEMT transistors at 1.6THz under arbitrary biasing conditions. Many novel electronic designs can be implemented for Millimeter-wave and THz technologies based on the physical FET's nonlinear nature in this frequency range</div>

Nonlinear Analytical Model of Localized Sub-THz and THz Rectifications in FET Power Detectors

<div>A nonlinear analytical model for THz FET power detectors based on their distributed RC network is presented. This empirical model works well for both drain-unbiased and drain-biased THz FET responses. The physics-based analysis reveals that localized THz rectifications in long channel transistors may be mathematically expressed in the same way as regular RF frequency rectifications of a single lumped device. However, the one lumped FET model can’t work properly at THz frequencies without correct definitions of THz signals on its terminals and independently considers localized rectifications on the source and drain sides. An improved compact one lumped THz FET power detector model with additional Schottky diodes at the source and drain terminals is presented. THz FET detector can also perform a simultaneous self-amplification (active rectification) of the localized THz rectified dc signal when operates in the saturation regime beyond its unity gain frequency. A novel analytical expression for the localized THz dc rectified response is developed for FETs operating in the saturation regime. The presented physics-based model agrees excellently with the measured experimental results of GaAs HEMT transistors at 1.6THz under arbitrary biasing conditions. Many novel electronic designs can be implemented for Millimeter-wave and THz technologies based on the physical FET's nonlinear nature in this frequency range</div>

Resistivity saturation in Kondo insulators

Resistivities of heavy-fermion insulators typically saturate below a characteristic temperature T*. For some, metallic surface states, potentially from a non-trivial bulk topology, are a likely source of residual conduction. Here, we establish an alternative mechanism: at low temperature, in addition to the charge gap, the scattering rate turns into a relevant energy scale, invalidating the semi-classical Boltzmann picture. Then, finite lifetimes of intrinsic carriers drive residual conduction, impose the existence of a crossover T*, and control—now on par with the gap—the quantum regime emerging below it. Assisted by realistic many-body simulations, we showcase the mechanism for the Kondo insulator Ce3Bi4Pt3, for which residual conduction is a bulk property, and elucidate how its saturation regime evolves under external pressure and varying disorder. Deriving a phenomenological formula for the quantum regime, we also unriddle the ill-understood bulk conductivity of SmB6—demonstrating a wide applicability of our mechanism in correlated narrow-gap semiconductors.

Freundlich Isotherm: An Adsorption Model Complete Framework

The absolute majority of modern studies dealing with the interpretation of experimental data on the basis of the Freundlich isotherm ignore the fact that the data obtained for regions of low and moderate adsorbate concentration/pressure can be analytically continued within the Freundlich adsorption model to the adsorptive saturation area with coverages tending to 100%. Needless to say, this would give valuable extended information about the corresponding adsorption process. This message proposes a framework to comprehensively analyse experimental data first recognised as complying with the Freundlich adsorption model. An algorithm-driven method is presented which enables one to translate the data obtained in the area of small and moderate the coverages of the area of adsorptive saturation regime. As examples, three sets of experimental data for adsorption of mercury (II) on N-rich porous organic polymers and of protein on carrier nano-Mg(OH)2 have been processed and presented according to the framework developed.

Analytical Continuation within the Freundlich Adsorption Model. Comment on Edet, U.A.; Ifelebuegu, A.O. Kinetics, Isotherms, and Thermodynamic Modeling of the Adsorption of Phosphates from Model Wastewater Using Recycled Brick Waste. Processes 2020, 8, 665

Using experimental data for the adsorption of phosphates out of wastewater on waste recycled bricks, published independently in MDPI Processes before (2020), this message re-visits the mathematical theory of the Freundlich adsorption model. It demonstrates how experimental data are to be deeper treated to model the saturation regime and to bridge a chasm between those areas where the data fit the Freundlich power function and where a saturation of surface adsorption centers occurs.

Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Power law behaviour in the saturation regime of fatality curves of the COVID-19 pandemic

We apply a versatile growth model, whose growth rate is given by a generalised beta distribution, to describe the complex behaviour of the fatality curves of the COVID-19 disease for several countries in Europe and North America. We show that the COVID-19 epidemic curves not only may present a subexponential early growth but can also exhibit a similar subexponential (power-law) behaviour in the saturation regime. We argue that the power-law exponent of the latter regime, which measures how quickly the curve approaches the plateau, is directly related to control measures, in the sense that the less strict the control, the smaller the exponent and hence the slower the diseases progresses to its end. The power-law saturation uncovered here is an important result, because it signals to policymakers and health authorities that it is important to keep control measures for as long as possible, so as to avoid a slow, power-law ending of the disease. The slower the approach to the plateau, the longer the virus lingers on in the population, and the greater not only the final death toll but also the risk of a resurgence of infections.

Cladding-Pumped Erbium/Ytterbium Co-Doped Fiber Amplifier for C-Band Operation in Optical Networks

Space-division multiplexing (SDM) attracts attention to cladding-pumped optical amplifiers, but they suffer from a low pump power conversion efficiency. To address this issue, ytterbium (Yb3+) and erbium (Er3+) co-doping is considered as an effective approach. However, it changes the gain profile of Er3+-doped fiber amplifiers and induces the gain difference between optical wavelengths in the C-band, significantly limiting the effective band of the dense wavelength-division multiplexed (DWDM) system. This paper is devoted to a detailed study of a cladding-pumped Er3+/Yb3+ co-doped fiber amplifier (EYDFA) through numerical simulations aiming to identify a configuration, before assembling a similar EYDFA in our laboratory premises that ensures the desired performance. The simulation model is based on a commercial double cladding EYDF whose parameters are experimentally extracted and fed to the EYDFA setup for the system-level studies. We investigate the wavelength dependence of the amplifier’s characteristics (absolute gain, gain uniformity, noise figure) and bit error rate (BER) performance for several DWDM channels and their optical power. The obtained results show that a 7 m long EYDF and co-propagating pump direction is preferable for the EYDFA with a 3 W pump source at 975 nm and with the given gain medium characteristics for WDM applications. For instance, it ensures a gain of 19.7–28.3 dB and a noise figure of 3.7–4.2 dB when amplifying 40 DWDM channels with the input power of −20 dBm per channel. Besides, we study EYDFA gain bandwidth and the maximum output power when operating close to the saturation regime and perform a sensitivity analysis showing how the doped fiber’s absorption and emission cross-sections impact the amplification process through energy transfer from Yb3+ to Er3+. Finally, we quantify the power penalty introduced by the EYDFA; the results show that it is not higher than 0.1 dB when amplifying 40 × 10 Gbps non-return-to-zero on-off keying signals from −20 dBm/channel.

Loading a Paul Trap: Densities, Capacities, and Scaling in the Saturation Regime

Providing ideal conditions for the study of ion-neutral collisions, we investigate here the properties of the saturated, steady state of a three-dimensional Paul trap, loaded from a magneto-optic trap. In particular, we study three assumptions that are sometimes made under saturated, steady-state conditions: (i) The pseudopotential provides a good approximation for the number, Ns, of ions in the saturation regime, (ii) the maximum of Ns occurs at a loading rate of approximately 1 ion per rf cycle, and (iii) the ion density is approximately constant. We find that none of these assumptions are generally valid. However, based on detailed classical molecular dynamics simulations, and as a function of loading rate and trap control parameter, we show where to find convenient dynamical regimes for ion-neutral collision experiments, or how to rescale to the pseudo-potential predictions. We also investigate the fate of the electrons generated during the loading process and present a new heating mechanism, insertion heating, that in some regimes of trapping and loading may rival and even exceed the rf-heating power of the trap.