Observation of photoemission behaviour during avalanche breakdown of insulated gate bipolar transistor with defect in the metal contact

2021 ◽  
Vol 125 ◽  
pp. 114365
Author(s):  
Koichi Endo ◽  
Chie Hongo ◽  
Norimichi Chinone ◽  
Tomonori Nakamura ◽  
Toru Matsumoto ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Metal Contact ◽  
Avalanche Breakdown ◽  
Insulated Gate Bipolar Transistor

Single-pulse observation of photoemission during avalanche breakdown in insulated gate bipolar transistor

2020 ◽  
Vol 114 ◽  
pp. 113739
Author(s):  
Koichi Endo ◽  
Norimichi Chinone ◽  
Tomonori Nakamura ◽  
Toru Matsumoto ◽  
Koji Nakamae
Keyword(s):  
Single Pulse ◽  
Bipolar Transistor ◽  
Avalanche Breakdown ◽  
Insulated Gate Bipolar Transistor

Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode

2012 ◽  
Vol 33 (12) ◽  
pp. 1684-1686 ◽  
Author(s):  
Huaping Jiang ◽  
Jin Wei ◽  
Bo Zhang ◽  
Wanjun Chen ◽  
Ming Qiao ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Band To Band Tunneling ◽  
Tunneling Injection

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

2015 ◽  
Vol 36 (6) ◽  
pp. 591-593 ◽  
Author(s):  
Hao Feng ◽  
Wentao Yang ◽  
Yuichi Onozawa ◽  
Takashi Yoshimura ◽  
Akira Tamenori ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor
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