Study and Optimization of Field Limiting Rings for 10kV SiC Insulated Gate Bipolar Transistor

A 10kV-level silicon carbide (SiC) insulated gate bipolar transistor (IGBT) with field limiting rings (FLRs) is designed and simulated with Sentaurus TCAD, the detailed optimization method and comparisons are presented in this paper. Linearly varying spacing between rings is introduced to SiC IGBT and adjustment is performed on width of rings, the final structure achieves a breakdown voltage over 12kV with a termination length of 164.5 µm , which is 69.93% lower than that of conventional structure with a fixed ring spacing. Moreover, the final design can decrease the sensitivity to the interface charges, the tolerance to positive surface charges exceeds 8 × 10 11 cm − 2 , which is 3.5 times that of the conventional structure. Besides, double pulse measurements prove no degradation of conduction and switching characteristics.

Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (Eoff) drops by about 7% when on-state voltage (Von) and breakdown voltage (BV) are similar. Von increases by about 0.5% and BV decreases by only about 0.8%.

A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems

We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-gate bipolar transistor (IGBT) model introduces nonlinear negative feedback generated in the semiconductor’s p+ and n+ layers, which are located near the metal contact of the IGBT emitter, to better describe the dynamic characteristics of the transistor. A simplified model of the metal–oxide-semiconductor field-effect transistor (MOSFET) in the IGBT is used to simplify this IGBT model. The second simpler behavioral model could be used to model both IGBTs and MOSFETs. Model parameters are obtained from datasheets and then adjusted using results from a single measurement test. Modeling results are compared with measured turn-on and turn-off waveforms for different types of IGBTs. To check the validation of the models, a brushless DC electric motor test setup with an inverter was created. Despite the simplicity of the presented models, a comparison of model predictions with hardware measurements revealed that the model accurately forecasted switch transients and aided EMI–EMC investigations.

Optimization of Insulated Gate Bipolar Transistor System to Maximize Heat Dissipation

An electric motor, a battery and an inverter are the key components of any hybrid vehicle. The most commonly used switching device in the electric power conversion system is Insulated Gate Bipolar Transistor (IGBT) modules. Heat sinks with their fins are optimized to provide the maximum heat flow to the surrounding and Pure copper is used as it has high thermal conductivity with reasonable heat resistance. This helps to decrease the temperature of the IGBT and heat will spread to the fins. Parallel forced air cooling is utilised to give maximum possible heat removal rate. Further experimentation was done on a IGBT using an Inverter circuit and it was analyzed on ANSYS software and it was observed that the results obtained by numerical method and experimental method are approximately same.

Thermal Cycling in Converter IGBT Modules with Different Cooling Systems in Pitch- and Active Stall-Controlled Tidal Turbines

This paper compares active and passive cooling systems in tidal turbine power electronic converters. The comparison is based on the lifetime of the IGBT (insulated gate bipolar transistor) power modules, calculated from the accumulated fatigue due to thermal cycling. The lifetime analysis accounts for the influence of site conditions, namely turbulence and surface waves. Results indicate that active cooling results in a significant improvement in IGBT lifetime over passive cooling. However, since passive cooling systems are inherently more reliable than active systems, passive systems can present a better solution overall, provided adequate lifetime values are achieved. On another note, the influence of pitch control and active speed stall control on the IGBT lifetime was also investigated. It is shown that the IGBT modules in pitch-controlled turbines are likely to have longer lifetimes than their counterparts in active stall-controlled turbines for the same power rating. Overall, it is demonstrated that passive cooling systems can provide adequate cooling in tidal turbine converters to last longer than the typical lifetime of tidal turbines (>25 years), both for pitch-controlled and active speed stall-controlled turbines.

A Comparison of Modern Heating Methods to Reduce a Heat Treaters CO2 Carbon Footprint

Several governments across the world have recently stepped up their action to fight climate change. Initiatives include from clean energy production to efficient buildings and reduced emissions from industry. The manufacturing industry will need to examine methods to reduce its carbon footprint, especially across energy-intensive sectors such as heat treatment. This paper explains and explores the latest developments in energy management in heat treatment with a specific focus on electrical heating and associated digital tools. In this paper, developments in IGBT (insulated-gate bipolar transistor) and SCR (silicon-controlled rectifier) technology will be compared as energy-efficient alternatives to variable reactance transformers (VRT’s) for electric vacuum furnaces.