Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation

2008 ◽  
Vol 473 (1-2) ◽  
pp. 201-205 ◽  
Author(s):  
Yiqun Shen ◽  
Wei Hu ◽  
Tingwei Zhang ◽  
Xiaofeng Xu ◽  
Jian Sun ◽  
...  
Vacuum ◽  
2010 ◽  
Vol 84 (11) ◽  
pp. 1306-1309 ◽  
Author(s):  
Xiaofeng Xu ◽  
Yiqun Shen ◽  
Ning Xu ◽  
Wei Hu ◽  
Jushui Lai ◽  
...  

2016 ◽  
Author(s):  
Y. Fujiwara ◽  
T. Ikebuchi ◽  
T. Ueyama ◽  
T. Tanaka ◽  
F. Nagasaki ◽  
...  

2007 ◽  
Vol 22 (8) ◽  
pp. 2339-2344 ◽  
Author(s):  
A. Allenic ◽  
W. Guo ◽  
Y.B. Chen ◽  
G.Y. Zhao ◽  
X.Q. Pan ◽  
...  

Epitaxial ZnO thin films doped uniformly with nitrogen at 1020 atoms/cm3 were fabricated by pulsed laser ablation of a Zn-rich Zn3N2 target. The films grown at 300 °C and annealed at 600 °C in O2 showed p-type conductivity. Two acceptor levels at 105 and 224 meV were determined by temperature-dependent Hall and photoluminescence measurements of the p-type samples. Transmission electron microscopy studies revealed that the p-type ZnO films consist of 10–20 nm columnar grains with a high density of defects and grain boundaries that may facilitate the annihilation of native donors and the activation of acceptors during postdeposition annealing.


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