Effect of the lateral misalignment of Si-capped Ge quantum dots on the strain distribution, the valence, conduction states and the optical properties

2007 ◽  
Vol 27 (5-8) ◽  
pp. 1461-1465 ◽  
Author(s):  
N. Skoulidis ◽  
H.M. Polatoglou
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Strain Distribution ◽  
Ge Quantum Dots

Advances in the growth and characterization of Ge quantum dots and islands

2005 ◽  
Vol 20 (12) ◽  
pp. 3278-3293 ◽  
Author(s):  
J-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Spatial Distribution ◽  
Strain Distribution ◽  
Growth Parameters ◽  
Nucleation And Growth ◽  
Structural And Optical Properties ◽  
Ge Quantum Dots

We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.

Structural, Compositional and Optical Properties of Self-Organised Ge Quantum Dots

2001 ◽  
Vol 224 (1) ◽  
pp. 265-269 ◽  
Author(s):  
A. Dunbar ◽  
U. Bangert ◽  
P. Dawson ◽  
M. Halsall ◽  
Y. Shiraki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Ge Quantum Dots

Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures

2018 ◽  
Vol 386 ◽  
pp. 68-74 ◽  
Author(s):  
Anatoly Dvurechenskii ◽  
Andrew Yakimov ◽  
Victor Kirienko ◽  
Alekcei Bloshkin ◽  
Vladimir Zinovyev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Quantum Dot ◽  
Mid Infrared ◽  
Device Application ◽  
Elemental Compositions ◽  
New Approaches ◽  
Ge Quantum Dots ◽  
Silicon Based ◽  
Is Strain

New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.

RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots

2000 ◽  
Vol 369 (1-2) ◽  
pp. 79-83 ◽  
Author(s):  
V.A. Markov ◽  
H.H. Cheng ◽  
Chih-ta Chia ◽  
A.I. Nikiforov ◽  
V.A. Cherepanov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Ge Quantum Dots

Formation and optical properties of Ge quantum dots selectively grown on patterned Si(001) substrates

2004 ◽  
Vol 201 (2) ◽  
pp. 353-356 ◽  
Author(s):  
Lam H. Nguyen ◽  
V. Le Thanh ◽  
V. Yam ◽  
D. D�barre ◽  
M. Halbwax ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Ge Quantum Dots

scholarly journals Preparation and optical properties of Ge and C-induced Ge quantum dots on Si

2000 ◽  
Vol 373 (1-2) ◽  
pp. 164-169 ◽  
Author(s):  
K Eberl ◽  
O.G Schmidt ◽  
O Kienzle ◽  
F Ernst
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Ge Quantum Dots

Progress in the Growth and Characterization of Ge Quantum Dots and Islands

2004 ◽  
Vol 832 ◽  
Author(s):  
J.-M. Baribeau ◽  
N.L. Rowell ◽  
D.J. Lockwood
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Spatial Distribution ◽  
Strain Distribution ◽  
Recent Progress ◽  
Growth Parameters ◽  
Nucleation And Growth ◽  
Structural And Optical Properties

ABSTRACTWe review progress in the growth of Si1-xGex islands and Ge dots on (001) Si. We discuss the evolution of the island morphology with Si1-xGex coverage, and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural, and optical properties of Si1-xGex islands and review recent progress in the determination of their composition and strain distribution. We discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular control their size, density and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence nucleation and growth of Ge islands.

scholarly journals Comparison of the Optical Properties of Graphene and Alkyl-terminated Si and Ge Quantum Dots

2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Chris de Weerd ◽  
Yonghun Shin ◽  
Emanuele Marino ◽  
Joosung Kim ◽  
Hyoyoung Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Ge Quantum Dots
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