Advances in the growth and characterization of Ge quantum dots and islands
2005 ◽
Vol 20
(12)
◽
pp. 3278-3293
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Keyword(s):
We review recent advances in the growth of Si1−xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1−xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1−xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1−xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.
2012 ◽
Vol 45
(43)
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pp. 435303
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Keyword(s):
2007 ◽
Vol 27
(5-8)
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pp. 1461-1465
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2006 ◽
Vol 32
(1-2)
◽
pp. 115-118
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Keyword(s):
2015 ◽
Vol 645
◽
pp. 443-449
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