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A deep-level transient spectroscopy study of transition metals in n-type germanium
Materials Science in Semiconductor Processing
◽
10.1016/j.mssp.2006.08.048
◽
2006
◽
Vol 9
(4-5)
◽
pp. 559-563
◽
Cited By ~ 23
Author(s):
S. Forment
◽
J. Vanhellemont
◽
P. Clauws
◽
J. Van Steenbergen
◽
S. Sioncke
◽
...
Keyword(s):
Transition Metals
◽
Deep Level Transient Spectroscopy
◽
Deep Level
◽
Spectroscopy Study
◽
Transient Spectroscopy
Download Full-text
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References
Deep Level Transient Spectroscopy Study of Defects and Impurities in GaN and Related III-N Materials
10.21236/ada418082
◽
2003
◽
Author(s):
David C. Look
Keyword(s):
Deep Level Transient Spectroscopy
◽
Deep Level
◽
Spectroscopy Study
◽
Defects And Impurities
◽
Transient Spectroscopy
Download Full-text
Deep-Level Transient Spectroscopy Study on Double Implanted N(+)-p and p(+)-n 4H-SiC Diodes
10.21236/ada424908
◽
2004
◽
Author(s):
Souvick Mitra
◽
Mulpuri V. Rao
◽
N. Papanicolaou
◽
K. A. Jones
◽
M. Derenge
Keyword(s):
Deep Level Transient Spectroscopy
◽
Deep Level
◽
Spectroscopy Study
◽
Transient Spectroscopy
Download Full-text
A deep level transient spectroscopy study of electron and proton irradiated p+n GaAs diodes
2009 European Conference on Radiation and Its Effects on Components and Systems
◽
10.1109/radecs.2009.5994593
◽
2009
◽
Author(s):
Jeffrey H. Warner
◽
Scott R. Messenger
◽
Robert J. Walters
◽
Steve A. Ringel
◽
Mark R. Brenner
Keyword(s):
Deep Level Transient Spectroscopy
◽
Deep Level
◽
Spectroscopy Study
◽
Transient Spectroscopy
Download Full-text
Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs
Acta Physica Polonica A
◽
10.12693/aphyspola.82.841
◽
1992
◽
Vol 82
(5)
◽
pp. 841-844
Author(s):
A. Babiński
◽
J. Przybytek
◽
M. Baj
◽
P. Omling
◽
L. Samuelson
◽
...
Keyword(s):
Hydrostatic Pressure
◽
Deep Level Transient Spectroscopy
◽
Deep Level
◽
Spectroscopy Study
◽
Transient Spectroscopy
Download Full-text
I-V, C-V and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor
Pramana
◽
10.1007/s12043-010-0011-1
◽
2010
◽
Vol 74
(1)
◽
pp. 97-107
◽
Cited By ~ 2
Author(s):
K. V. Madhu
◽
S. R. Kulkarni
◽
R. Damle
Keyword(s):
Deep Level Transient Spectroscopy
◽
Deep Level
◽
Spectroscopy Study
◽
Bipolar Junction Transistor
◽
Junction Transistor
◽
Transient Spectroscopy
Download Full-text
Deep levels and DX centers in AlxGa1−xAs/GaAs. II. Field effect deep level transient spectroscopy study
Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena
◽
10.1116/1.586397
◽
1992
◽
Vol 10
(1)
◽
pp. 94
◽
Cited By ~ 6
Author(s):
N. C. Halder
Keyword(s):
Deep Level Transient Spectroscopy
◽
Field Effect
◽
Deep Level
◽
Deep Levels
◽
Spectroscopy Study
◽
Dx Centers
◽
Transient Spectroscopy
Download Full-text
Metallic contamination in silicon during plasma resist stripping: A deep level transient spectroscopy study
Applied Physics Letters
◽
10.1063/1.101136
◽
1989
◽
Vol 54
(22)
◽
pp. 2241-2243
◽
Cited By ~ 5
Author(s):
O. Joubert
◽
D. Mathiot
◽
J. Pelletier
Keyword(s):
Deep Level Transient Spectroscopy
◽
Deep Level
◽
Spectroscopy Study
◽
Transient Spectroscopy
◽
Metallic Contamination
Download Full-text
Deep level transient spectroscopy study of GaAs surface states treated with inorganic sulfides
Applied Physics Letters
◽
10.1063/1.100065
◽
1988
◽
Vol 53
(12)
◽
pp. 1059-1061
◽
Cited By ~ 39
Author(s):
D. Liu
◽
T. Zhang
◽
R. A. LaRue
◽
J. S. Harris
◽
T. W. Sigmon
Keyword(s):
Deep Level Transient Spectroscopy
◽
Deep Level
◽
Surface States
◽
Gaas Surface
◽
Spectroscopy Study
◽
Transient Spectroscopy
Download Full-text
Deep‐level transient spectroscopy study of a thermal conversion layer on semi‐insulating GaAs grown by the liquid‐encapsulated Czochralski method
Journal of Applied Physics
◽
10.1063/1.337174
◽
1986
◽
Vol 60
(6)
◽
pp. 2184-2186
◽
Cited By ~ 4
Author(s):
Y. J. Chan
◽
M. S. Lin
Keyword(s):
Deep Level Transient Spectroscopy
◽
Deep Level
◽
Czochralski Method
◽
Thermal Conversion
◽
Spectroscopy Study
◽
Transient Spectroscopy
Download Full-text
A deep‐level transient spectroscopy study of high electron mobility transistors subjected to lifetime stress tests
Journal of Applied Physics
◽
10.1063/1.343667
◽
1989
◽
Vol 66
(11)
◽
pp. 5613-5617
◽
Cited By ~ 9
Author(s):
R. Magno
◽
R. Shelby
◽
W. T. Anderson
Keyword(s):
Electron Mobility
◽
Deep Level Transient Spectroscopy
◽
Deep Level
◽
High Electron Mobility Transistors
◽
High Electron
◽
Spectroscopy Study
◽
Stress Tests
◽
High Electron Mobility
◽
Electron Mobility Transistors
◽
Transient Spectroscopy
Download Full-text
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