Structural, chemical bonding and optoelectronic properties of Mg doped zinc chalcogenides: A first principles study

2014 ◽  
Vol 26 ◽  
pp. 681-689 ◽  
Author(s):  
Naeem Ullah ◽  
G. Murtaza ◽  
R. Khenata ◽  
Jan Rehman ◽  
Haleem Ud Din ◽  
...  
2011 ◽  
Vol 249 (1) ◽  
pp. 185-189 ◽  
Author(s):  
Zhen-Kun Tang ◽  
Ling-Ling Wang ◽  
Li-Ming Tang ◽  
Xiao-Fei Li ◽  
Wen-Zhi Xiao ◽  
...  

Materia Japan ◽  
2006 ◽  
Vol 45 (12) ◽  
pp. 871-871
Author(s):  
Teruyasu Mizoguchi ◽  
Yuichi Ikuhara ◽  
Takeo Sasaki ◽  
Shingo Tanaka ◽  
Masanori Kohyama ◽  
...  

2013 ◽  
Vol 117 (9) ◽  
pp. 4337-4344 ◽  
Author(s):  
Chu Chen ◽  
Jun Zhang ◽  
Bei Zhang ◽  
Hai Ming Duan

2012 ◽  
Vol 602-604 ◽  
pp. 555-558 ◽  
Author(s):  
Hui Nan Hao ◽  
Xu Wang ◽  
Fu He Wang

In this paper, the structural stability, adhesion and chemical bonding of the TiO2 (110)/TiAl (111) interface are investigated by the first-principles calculations. We predict the maximum adhesion energy of 1.91J/m2 of the TiO2/TiAl interface. We also calculated the Nb doped interface, and found that the doped Nb atom prefers to replace the Ti atom at the second layer of TiAl slab. The atomic geometry and density of states are analyzed. The results show that the effect of doped Nb is localized and insignificant on the TiO2 (110)/TiAl(111) interface.


2017 ◽  
Vol 46 (7) ◽  
pp. 4640-4648 ◽  
Author(s):  
Noor Ullah ◽  
Zahid Ali ◽  
Imad Khan ◽  
Gul Rehman ◽  
Iftikhar Ahmad

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