Comparative study on electronic properties of GaN nanowires by external electric field

2021 ◽  
Vol 134 ◽  
pp. 106015
Author(s):  
Lei Liu ◽  
Feifei Lu ◽  
Jian Tian
Keyword(s):  
Electric Field ◽  
Comparative Study ◽  
Electronic Properties ◽  
External Electric Field ◽  
Gan Nanowires

scholarly journals Electronic Properties of Bilayer Graphene Strongly Coupled to Interlayer Stacking and an External Electric Field

2015 ◽  
Vol 115 (1) ◽  
Author(s):  
Changwon Park ◽  
Junga Ryou ◽  
Suklyun Hong ◽  
Bobby G. Sumpter ◽  
Gunn Kim ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Bilayer Graphene ◽  
Strongly Coupled

Silicene and germanene on InSe substrates: structures and tunable electronic properties

2018 ◽  
Vol 20 (16) ◽  
pp. 11369-11377 ◽  
Author(s):  
Yingcai Fan ◽  
Xiaobiao Liu ◽  
Junru Wang ◽  
Haoqiang Ai ◽  
Mingwen Zhao
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field

The tunable electronic properties of Si/InSe and Ge/InSe HLs by applying an external electric field or strain.

Influence of the adsorption of toxic agents on the optical and electronic properties of B12N12 fullerene in the presence and absence of an external electric field

2020 ◽  
Vol 44 (34) ◽  
pp. 14513-14528
Author(s):  
Alireza Soltani ◽  
Mohammad Ramezanitaghartapeh ◽  
Masoud Bezi Javan ◽  
Mohammad T. Baei ◽  
Andrew Ng Kay Lup ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Electric Field ◽  
Dft Calculations ◽  
Electronic Properties ◽  
External Electric Field ◽  
Density Functional ◽  
Interaction Energies ◽  
Functional Theory ◽  
Toxic Agents ◽  
Optical And Electronic Properties

The interaction energies and optoelectronic properties of sarin (SF) and chlorosarin (SC) on the B12N12 with and without the presence of an electric field have been studied using density functional theory (DFT) calculations.

The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang
Keyword(s):  
Solar Energy ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Bandgap ◽  
Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

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