Controlling electronic properties of PtS2/InSe van der Waals heterostructure via external electric field and vertical strain

2019 ◽  
Vol 724 ◽  
pp. 1-7 ◽  
Author(s):  
Chuong V. Nguyen ◽  
H.D. Bui ◽  
Trinh D. Nguyen ◽  
Khang D. Pham
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

scholarly journals Electric field induced electronic properties modification of ZrS2/HfS2 van der Waals heterostructure

RSC Advances ◽  
2017 ◽  
Vol 7 (24) ◽  
pp. 14625-14630 ◽  
Author(s):  
Jimin Shang ◽  
Shuai Zhang ◽  
Xuerui Cheng ◽  
Zhongming Wei ◽  
Jingbo Li
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
First Principles ◽  
Van Der Waals ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructure

By using first-principles calculations, we investigate the electronic properties of a ZrS2/HfS2 heterostructure modulated by an external electric field.

Tunable electronic properties in the van der Waals heterostructure of germanene/germanane

2015 ◽  
Vol 17 (18) ◽  
pp. 12194-12198 ◽  
Author(s):  
Run-wu Zhang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Feng Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
External Electric Field ◽  
High Performance ◽  
Room Temperature ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Structural And Electronic Properties

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.

Type-II band alignment AlN/InSe van der Waals heterostructure: Vertical strain and external electric field

2020 ◽  
Vol 528 ◽  
pp. 146782 ◽  
Author(s):  
Ru Zhang ◽  
Yan Zhang ◽  
Xing Wei ◽  
Tingting Guo ◽  
Jibin Fan ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Layered graphene/GaS van der Waals heterostructure: Controlling the electronic properties and Schottky barrier by vertical strain

2018 ◽  
Vol 113 (17) ◽  
pp. 171605 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
I. A. Fedorov ◽  
C. A. Duque ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
Van Der Waals ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang
Keyword(s):  
Solar Energy ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Bandgap ◽  
Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

The strain effect on the electronic properties of the MoSSe/WSSe van der Waals heterostructure: a first-principles study

2020 ◽  
Vol 22 (9) ◽  
pp. 4946-4956 ◽  
Author(s):  
Wenyu Guo ◽  
Xun Ge ◽  
Shoutian Sun ◽  
Yiqun Xie ◽  
Xiang Ye
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Van Der Waals ◽  
Strain Effect ◽  
Vertical Strain ◽  
First Principles Study ◽  
Van Der Waals Heterostructure ◽  
Vdw Heterostructure

The structural, mechanical and electronic properties of the MoSSe/WSSe van der Waals (vdW) heterostructure under various degrees of horizontal and vertical strain are systematically investigated based on first-principles methods.

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Graphene Sheet ◽  
2D Materials ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Two Dimensional Materials ◽  
Structural And Electronic Properties

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

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