GaN nanostructures by reactive ion etching: Mask and Maskless approach

2019 ◽  
Vol 18 ◽  
pp. 100284 ◽  
Author(s):  
Jaya Lohani ◽  
Shivani Varshney ◽  
Dipendra S. Rawal ◽  
Sameer Sapra ◽  
Renu Tyagi
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Etching Mask

Reactive ion etching of 2 μm by 8 μm Si deep trench using photoresist as the etching mask

2005 ◽  
Author(s):  
T.C. Lo ◽  
J.S. Zhang ◽  
H.C. Huang ◽  
G.W. Huang ◽  
S. Su ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Trench ◽  
Etching Mask

Self-assembled Ni nanodot on SiO 2 film: a novel reactive ion etching mask for Si nanopillar formation on Si substrate

2006 ◽  
Author(s):  
Huang-Shen Lin ◽  
Chih-Chiang Kao ◽  
Hao-Chung Kuo ◽  
Shing-Chung Wang ◽  
Gong-Ru Lin
Keyword(s):  
Reactive Ion Etching ◽  
Si Substrate ◽  
Ion Etching ◽  
Etching Mask ◽  
Self Assembled

Study of Silicon Substrate Microspheres Reactive Ion Etching Technique

2012 ◽  
Vol 542-543 ◽  
pp. 945-948
Author(s):  
Dong Sheng Peng ◽  
Zhi Gang Chen ◽  
Cong Cong Tan
Keyword(s):  
Silicon Substrate ◽  
Reactive Ion Etching ◽  
Si Substrate ◽  
Large Area ◽  
Etching Technique ◽  
Ion Etching ◽  
Pillar Arrays ◽  
Etching Mask

The paper studies the microspheres etching technique, the silicon pillar arrays are fabricated using polystyrene particles as etching mask by Reactive Ion Etching. Obtained the substrate can be Lateral epitaxial. The influence of different parameters in etch process are investigated on silicon pillar arrays in detail. A large-area Si pillar can be obtained on Si substrate by controlling the suitable etch parameters. The approach reported here offers a possibility to product large-area pillar.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
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